This work proposes a new pixel structure based on amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) and a parallel addressing scheme for high-resolution active-matrix organic light-emitting diode (AMOLED) displays. The proposed circuit compensates for the nonuniformity of luminance that is caused by shifts in the threshold voltage (VTH) and mobility of driving TFTs. Measurement results verify that the parallel addressing scheme successfully extends the compensation time and accurately detects the VTH of the driving TFT. Moreover, the proposed circuit reduces the variations of OLED luminance from more than 83% to less than 13% when the VTH and mobility of driving TFT shifts by 1 V and 30%, respectively, and the VTH of OLED varies from 0 to 0.9 V.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering