Abstract
Planar GaN-based p-n - -n + photodetectors were fabricated by Si implantation into p-GaN to form the p-n junction. Two-step triple Si implantation was performed to form a selective n + and n - area in p-GaN epitaxial layer with uniform doping profile. Therefore, a planar GaN p-n - -n + UV photodetector can be achieved. When the reverse bias was below 4V, the photodetectors showed a near constant dark current around 20pA. The dark current is somewhat high compared with conventional epitaxial p-i-n photodiodes. Spectral response measurements revealed peak of responsivity up to 12.4mA/W at 365nm for the planar p-n - -n + UV photodetector. It was also found that the visible (450nm)-to-UV (360nm) rejection ratio was around 650. Furthermore, temporal response measurements for the planar GaN-based p-n - -n + UV photodetector were measured to be as low as 5.7 ns for 90%-to-10% fall time.
| Original language | English |
|---|---|
| Pages | 522-528 |
| Number of pages | 7 |
| Publication status | Published - 2004 Dec 1 |
| Event | State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States Duration: 2004 Oct 3 → 2004 Oct 8 |
Other
| Other | State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia |
|---|---|
| Country | United States |
| City | Honolulu, HI |
| Period | 04-10-03 → 04-10-08 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
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Planar GaN-based UV photodetectors formed by Si implantation. / Chen, M. C.; Sheu, Jinn-Kong; Lee, M. L.; Kao, C. J.; Tun, C. J.; Chi, G. C.
2004. 522-528 Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.Research output: Contribution to conference › Paper
TY - CONF
T1 - Planar GaN-based UV photodetectors formed by Si implantation
AU - Chen, M. C.
AU - Sheu, Jinn-Kong
AU - Lee, M. L.
AU - Kao, C. J.
AU - Tun, C. J.
AU - Chi, G. C.
PY - 2004/12/1
Y1 - 2004/12/1
N2 - Planar GaN-based p-n - -n + photodetectors were fabricated by Si implantation into p-GaN to form the p-n junction. Two-step triple Si implantation was performed to form a selective n + and n - area in p-GaN epitaxial layer with uniform doping profile. Therefore, a planar GaN p-n - -n + UV photodetector can be achieved. When the reverse bias was below 4V, the photodetectors showed a near constant dark current around 20pA. The dark current is somewhat high compared with conventional epitaxial p-i-n photodiodes. Spectral response measurements revealed peak of responsivity up to 12.4mA/W at 365nm for the planar p-n - -n + UV photodetector. It was also found that the visible (450nm)-to-UV (360nm) rejection ratio was around 650. Furthermore, temporal response measurements for the planar GaN-based p-n - -n + UV photodetector were measured to be as low as 5.7 ns for 90%-to-10% fall time.
AB - Planar GaN-based p-n - -n + photodetectors were fabricated by Si implantation into p-GaN to form the p-n junction. Two-step triple Si implantation was performed to form a selective n + and n - area in p-GaN epitaxial layer with uniform doping profile. Therefore, a planar GaN p-n - -n + UV photodetector can be achieved. When the reverse bias was below 4V, the photodetectors showed a near constant dark current around 20pA. The dark current is somewhat high compared with conventional epitaxial p-i-n photodiodes. Spectral response measurements revealed peak of responsivity up to 12.4mA/W at 365nm for the planar p-n - -n + UV photodetector. It was also found that the visible (450nm)-to-UV (360nm) rejection ratio was around 650. Furthermore, temporal response measurements for the planar GaN-based p-n - -n + UV photodetector were measured to be as low as 5.7 ns for 90%-to-10% fall time.
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M3 - Paper
SP - 522
EP - 528
ER -