Planar GaN n+ - P photodetectors formed by si implantation into p-GaN

J. K. Sheu, M. L. Lee, L. S. Yeh, C. J. Kao, C. J. Tun, M. G. Chen, G. C. Chi, S. J. Chang, Y. K. Su, C. T. Lee

Research output: Contribution to journalArticlepeer-review

43 Citations (Scopus)

Abstract

Si implantation into p-GaN was used to fabricate GaN n+-p junction diodes. The visible rejection ratio was observed to be around 260. The temporal response measurements revealed that the fall times of these GaN planar n+-p photodetectors was shorter than 0.4 μs.

Original languageEnglish
Pages (from-to)4263-4265
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number22
DOIs
Publication statusPublished - 2002 Nov 25

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint

Dive into the research topics of 'Planar GaN n+ - P photodetectors formed by si implantation into p-GaN'. Together they form a unique fingerprint.

Cite this