Abstract
Si implantation into p-GaN was used to fabricate GaN n+-p junction diodes. The visible rejection ratio was observed to be around 260. The temporal response measurements revealed that the fall times of these GaN planar n+-p photodetectors was shorter than 0.4 μs.
Original language | English |
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Pages (from-to) | 4263-4265 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 81 |
Issue number | 22 |
DOIs | |
Publication status | Published - 2002 Nov 25 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)