Planar GaN p-i-n photodiodes with n+-conductive channel formed by Si implantation

M. C. Chen, Jinn-Kong Sheu, M. L. Lee, C. J. Kao, G. C. Chi

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

In this study, planar GaN p-i-n photodiodes (PDs) were fabricated by Si implantation into GaN-based p-i-n structure grown by metal organic vapor-phase epitaxy. Triple silicon implantation was performed to form a selective n+ channel through the multilayer p-i-n structure. As a result of n+ -channel formation, a planar GaN p-i-n detector could be obtained. With the reverse bias below 2 V, the dark current density was well below 50 pA. The dark current increased significantly with an increase of reverse bias, which may be attributed to the incomplete damage (from implantation) removal and thereby result in the higher leakage current. The typical peak responsivity and the cutoff wavelength for the Si-implanted planar p-i-n PDs were around 0.13 AW and 365 nm, respectively. In addition, the visible (450 nm) -to-UV (365 nm) rejection ratio of around three to four orders could be extracted from the spectra response. Furthermore, the transient response measurements revealed that the full width at half maximum (FWHM) of impulse response was as low as 1.12 ns.

Original languageEnglish
Article number203508
JournalApplied Physics Letters
Volume88
Issue number20
DOIs
Publication statusPublished - 2006 May 15

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photodiodes
implantation
dark current
transient response
vapor phase epitaxy
rejection
impulses
leakage
cut-off
current density
damage
detectors
silicon
wavelengths
metals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Chen, M. C. ; Sheu, Jinn-Kong ; Lee, M. L. ; Kao, C. J. ; Chi, G. C. / Planar GaN p-i-n photodiodes with n+-conductive channel formed by Si implantation. In: Applied Physics Letters. 2006 ; Vol. 88, No. 20.
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Planar GaN p-i-n photodiodes with n+-conductive channel formed by Si implantation. / Chen, M. C.; Sheu, Jinn-Kong; Lee, M. L.; Kao, C. J.; Chi, G. C.

In: Applied Physics Letters, Vol. 88, No. 20, 203508, 15.05.2006.

Research output: Contribution to journalArticle

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