Planar Hall Effect in Antiferromagnetic MnTe Thin Films

Gen Yin, Jie Xiang Yu, Yizhou Liu, Roger K. Lake, Jiadong Zang, Kang L. Wang

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


We show that the spin-orbit coupling (SOC) in α-MnTe impacts the transport behavior by generating an anisotropic valence-band splitting, resulting in four spin-polarized pockets near Γ. A minimal k·p model is constructed to capture this splitting by group theory analysis, a tight-binding model, and ab initio calculations. The model is shown to describe the rotation symmetry of the zero-field planer Hall effect (PHE). The PHE originates from the band anisotropy given by SOC, and is quantitatively estimated to be 25%-31% for an ideal thin film with a single antiferromagnetic domain.

Original languageEnglish
Article number106602
JournalPhysical review letters
Issue number10
Publication statusPublished - 2019 Mar 13

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


Dive into the research topics of 'Planar Hall Effect in Antiferromagnetic MnTe Thin Films'. Together they form a unique fingerprint.

Cite this