Planar ultraviolet photodetectors formed by Si implantation into p-GaN

M. C. Chen, J. K. Sheu, M. L. Lee, C. J. Kao, C. J. Tun, G. C. Chi

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Planar GaN-based p-n-n+photodetectors were formed through Si implantation into p-GaN. When the reverse bias was below 4 V, the photodetectors showed nearly constant dark current around 20 pA. The dark current was somewhat higher as compared to the dark current observed in conventional epitaxial grown p-i-n photodiodes. Increase in dark current may be due to the incomplete damage (induced by implantation) removal. Spectral response measurements revealed that peak responsivity was around 11.4 mA/W at 360 nm for the planar p-n--n+UV photodetectors with a reverse bias of 1 V. It was also found that visible (450 nm)-lo-UV (360 nm) rejection ratio was around 700.

Original languageEnglish
Pages (from-to)G799-G801
JournalJournal of the Electrochemical Society
Volume153
Issue number9
DOIs
Publication statusPublished - 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Planar ultraviolet photodetectors formed by Si implantation into p-GaN'. Together they form a unique fingerprint.

Cite this