TY - JOUR
T1 - Planarized Trench Isolation of In0.52Al0.48As/In0.8Ga0.2As Metamorphic High-Electron-Mobility Transistor by Liquid Phase Chemical Enhanced Oxidation
AU - Chen, Houng Wei
AU - Lee, Tsung Ying
AU - Huang, Jung Sheng
AU - Lee, Kuan Wei
AU - Wang, Yeong Her
N1 - Funding Information:
This work was supported in part by the Ministry of Science and Technology (MOST) of Taiwan under Contract MOST 103-2221-E-214-043, Contract MOST 104-2221-E-214-026, and Contract MOST 109-2221-E-006-075-MY2.
Publisher Copyright:
© 2013 IEEE.
PY - 2021
Y1 - 2021
N2 - The liquid phase chemical enhanced oxidation (LPCEO) technique was applied to achieve planarized isolation of a high-indium-content In0.52Al0.48As/In0.8Ga0.2As metamorphic high-electron-mobility transistor (MHEMT). Through a simple, low-temperature process not requiring costly machinery, electrical isolation of components was accomplished. In addition, multiple advantages were gained, including the production of planarized surfaces, low pollution, and reduction in the subsequent disposal of wet etching solution and costs for dry etching or ion implantation. Because of the decrease in lateral defect density caused by wet or dry etching and the further decrease in gate leakage current owing to the isolated oxide film, the performance of devices, with improved DC characteristics, less flicker noise, and enhanced high-frequency performance, can be increased.
AB - The liquid phase chemical enhanced oxidation (LPCEO) technique was applied to achieve planarized isolation of a high-indium-content In0.52Al0.48As/In0.8Ga0.2As metamorphic high-electron-mobility transistor (MHEMT). Through a simple, low-temperature process not requiring costly machinery, electrical isolation of components was accomplished. In addition, multiple advantages were gained, including the production of planarized surfaces, low pollution, and reduction in the subsequent disposal of wet etching solution and costs for dry etching or ion implantation. Because of the decrease in lateral defect density caused by wet or dry etching and the further decrease in gate leakage current owing to the isolated oxide film, the performance of devices, with improved DC characteristics, less flicker noise, and enhanced high-frequency performance, can be increased.
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U2 - 10.1109/JEDS.2021.3054399
DO - 10.1109/JEDS.2021.3054399
M3 - Article
AN - SCOPUS:85100457705
VL - 9
SP - 271
EP - 277
JO - IEEE Journal of the Electron Devices Society
JF - IEEE Journal of the Electron Devices Society
SN - 2168-6734
M1 - 9335957
ER -