Plasma resistance and behavior of polybenzoxazine polymer

Jem Kun Chen, Kuang-I Lin, Fu Hsiang Ko, Feng Chih Chang, Feng Chih Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The structure of B-a type polybenzoxazine(PBZZ) is similar to phenolic resin through thermal self-curing of the heterocyclic ring opening reaction that neither requires catalyst nor releases any condensation byproduct. These PBZZ resins are found to possess several outstanding properties such as near no shrinkage after curing, high thermal stability and low water absorption. Furthermore, the PBZZ has high glass transition temperature even though it has relatively low cross linking density. Hence, the PBZZ polymer is a candidate material for IC manufacturing. The plasma treatment of this polymer is reported here.

Original languageEnglish
Title of host publicationDigest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages260-261
Number of pages2
ISBN (Electronic)4891140402, 9784891140403
DOIs
Publication statusPublished - 2003 Jan 1
EventInternational Microprocesses and Nanotechnology Conference, MNC 2003 - Tokyo, Japan
Duration: 2003 Oct 292003 Oct 31

Publication series

NameDigest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003

Conference

ConferenceInternational Microprocesses and Nanotechnology Conference, MNC 2003
CountryJapan
CityTokyo
Period03-10-2903-10-31

Fingerprint

Curing
Plasmas
Phenolic resins
Water absorption
Polymers
Byproducts
Condensation
Thermodynamic stability
Resins
Catalysts
Glass transition temperature
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Chen, J. K., Lin, K-I., Ko, F. H., Chang, F. C., & Chen, F. C. (2003). Plasma resistance and behavior of polybenzoxazine polymer. In Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003 (pp. 260-261). [1268745] (Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2003.1268745
Chen, Jem Kun ; Lin, Kuang-I ; Ko, Fu Hsiang ; Chang, Feng Chih ; Chen, Feng Chih. / Plasma resistance and behavior of polybenzoxazine polymer. Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 260-261 (Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003).
@inproceedings{f9047c76e4c14b45b57cfbabc23f9195,
title = "Plasma resistance and behavior of polybenzoxazine polymer",
abstract = "The structure of B-a type polybenzoxazine(PBZZ) is similar to phenolic resin through thermal self-curing of the heterocyclic ring opening reaction that neither requires catalyst nor releases any condensation byproduct. These PBZZ resins are found to possess several outstanding properties such as near no shrinkage after curing, high thermal stability and low water absorption. Furthermore, the PBZZ has high glass transition temperature even though it has relatively low cross linking density. Hence, the PBZZ polymer is a candidate material for IC manufacturing. The plasma treatment of this polymer is reported here.",
author = "Chen, {Jem Kun} and Kuang-I Lin and Ko, {Fu Hsiang} and Chang, {Feng Chih} and Chen, {Feng Chih}",
year = "2003",
month = "1",
day = "1",
doi = "10.1109/IMNC.2003.1268745",
language = "English",
series = "Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "260--261",
booktitle = "Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003",
address = "United States",

}

Chen, JK, Lin, K-I, Ko, FH, Chang, FC & Chen, FC 2003, Plasma resistance and behavior of polybenzoxazine polymer. in Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003., 1268745, Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003, Institute of Electrical and Electronics Engineers Inc., pp. 260-261, International Microprocesses and Nanotechnology Conference, MNC 2003, Tokyo, Japan, 03-10-29. https://doi.org/10.1109/IMNC.2003.1268745

Plasma resistance and behavior of polybenzoxazine polymer. / Chen, Jem Kun; Lin, Kuang-I; Ko, Fu Hsiang; Chang, Feng Chih; Chen, Feng Chih.

Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 260-261 1268745 (Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Plasma resistance and behavior of polybenzoxazine polymer

AU - Chen, Jem Kun

AU - Lin, Kuang-I

AU - Ko, Fu Hsiang

AU - Chang, Feng Chih

AU - Chen, Feng Chih

PY - 2003/1/1

Y1 - 2003/1/1

N2 - The structure of B-a type polybenzoxazine(PBZZ) is similar to phenolic resin through thermal self-curing of the heterocyclic ring opening reaction that neither requires catalyst nor releases any condensation byproduct. These PBZZ resins are found to possess several outstanding properties such as near no shrinkage after curing, high thermal stability and low water absorption. Furthermore, the PBZZ has high glass transition temperature even though it has relatively low cross linking density. Hence, the PBZZ polymer is a candidate material for IC manufacturing. The plasma treatment of this polymer is reported here.

AB - The structure of B-a type polybenzoxazine(PBZZ) is similar to phenolic resin through thermal self-curing of the heterocyclic ring opening reaction that neither requires catalyst nor releases any condensation byproduct. These PBZZ resins are found to possess several outstanding properties such as near no shrinkage after curing, high thermal stability and low water absorption. Furthermore, the PBZZ has high glass transition temperature even though it has relatively low cross linking density. Hence, the PBZZ polymer is a candidate material for IC manufacturing. The plasma treatment of this polymer is reported here.

UR - http://www.scopus.com/inward/record.url?scp=84949202039&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84949202039&partnerID=8YFLogxK

U2 - 10.1109/IMNC.2003.1268745

DO - 10.1109/IMNC.2003.1268745

M3 - Conference contribution

AN - SCOPUS:84949202039

T3 - Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003

SP - 260

EP - 261

BT - Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Chen JK, Lin K-I, Ko FH, Chang FC, Chen FC. Plasma resistance and behavior of polybenzoxazine polymer. In Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 260-261. 1268745. (Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003). https://doi.org/10.1109/IMNC.2003.1268745