Plasma treatments of indium tin oxide anodes in carbon tetrafluorinde (CF4)/oxygen (O2) to improve the performance of organic light-emitting diodes

I. Min Chan; Franklin Chau Nan Hong

doi:10.1016/S0040-6090(03)01197-0

Plasma treatments of indium tin oxide anodes in carbon tetrafluorinde (CF₄)/oxygen (O₂) to improve the performance of organic light-emitting diodes

I. Min Chan, Franklin Chau Nan Hong

Department of Chemical Engineering

Research output: Contribution to journal › Article › peer-review

50 Citations (Scopus)

Abstract

The effects of various gases employed for plasma treatments of indium-tin oxide (ITO) anode surfaces have been studied on the performance of organic light-emitting diode (OLED) devices. Compared with those using pure oxygen (O₂) or pure carbon tetrafluoride (CF₄), the plasma treatment of the ITO surface using CF₄/O₂ mixture significantly improved the OLED device performance by enhancing the hole injections from the anode. The effects of the CF₄/O₂ ratios and the pressure of the plasma treatments were also studied. X-Ray photoelectron spectroscopy (XPS) results indicated that the carbon contaminants were more efficiently removed by CF₄/O₂ mixture plasma from the ITO surface than the conventional O₂ plasma. XPS results also suggested that the fluorine bonded directly to indium or tin on the ITO surface effectively reduced the hole injection barrier, improving the device performance.

Original language	English
Pages (from-to)	254-259
Number of pages	6
Journal	Thin Solid Films
Volume	444
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(03)01197-0
Publication status	Published - 2003 Nov 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(03)01197-0

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abstract = "The effects of various gases employed for plasma treatments of indium-tin oxide (ITO) anode surfaces have been studied on the performance of organic light-emitting diode (OLED) devices. Compared with those using pure oxygen (O2) or pure carbon tetrafluoride (CF4), the plasma treatment of the ITO surface using CF4/O2 mixture significantly improved the OLED device performance by enhancing the hole injections from the anode. The effects of the CF4/O2 ratios and the pressure of the plasma treatments were also studied. X-Ray photoelectron spectroscopy (XPS) results indicated that the carbon contaminants were more efficiently removed by CF4/O2 mixture plasma from the ITO surface than the conventional O2 plasma. XPS results also suggested that the fluorine bonded directly to indium or tin on the ITO surface effectively reduced the hole injection barrier, improving the device performance.",

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AB - The effects of various gases employed for plasma treatments of indium-tin oxide (ITO) anode surfaces have been studied on the performance of organic light-emitting diode (OLED) devices. Compared with those using pure oxygen (O2) or pure carbon tetrafluoride (CF4), the plasma treatment of the ITO surface using CF4/O2 mixture significantly improved the OLED device performance by enhancing the hole injections from the anode. The effects of the CF4/O2 ratios and the pressure of the plasma treatments were also studied. X-Ray photoelectron spectroscopy (XPS) results indicated that the carbon contaminants were more efficiently removed by CF4/O2 mixture plasma from the ITO surface than the conventional O2 plasma. XPS results also suggested that the fluorine bonded directly to indium or tin on the ITO surface effectively reduced the hole injection barrier, improving the device performance.

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Plasma treatments of indium tin oxide anodes in carbon tetrafluorinde (CF₄)/oxygen (O₂) to improve the performance of organic light-emitting diodes

Abstract

All Science Journal Classification (ASJC) codes

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