@inproceedings{518d09b9ae344aa58e47b7e55453b0b7,
title = "pMOSFET with CVD-grown 2D semiconductor channel enabled by ultra-thin and fab-compatible spacer doping",
abstract = "We present the first demonstration of p-MOSFET with a high ON current of 10{-5} mathrm{A}/ mathrm{u} mathrm{m} and good S.S. sim 80 mathrm{m} mathrm{V}/ mathrm{d} mathrm{e} mathrm{c}. MOSFETs have the advantage of lower access resistance compared to Schottky barrier FETs. This requires spacer doping. Here, we introduce a self-limiting, fab-compatible process which consists of mathrm{W} mathrm{O}-{ mathrm{x}} obtained from mathrm{W} mathrm{S} mathrm{e}-{2} by O2 plasma conversion. We analyze the process condition which enhance the doping effect. We quantify the doping level and the impact of the channel bandgap. We demonstrate a self-aligned version of the spacer doping for MOSFET fabrication.",
author = "Hung, {Terry Y.T.} and Li, {Meng Zhan} and Yun, {Wei Sheng} and Chou, {Sui An} and Su, {Sheng Kai} and Edward Chen and Liew, {San Lin} and Yang, {Ying Mei} and Lin, {Kuang I.} and Vincent Hou and Lee, {T. Y.} and Han Wang and Albert Cheng and Lin, {Minn Tsong} and Wong, {H. S.Philip} and Radu, {Iuliana P.}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Electron Devices Meeting, IEDM 2022 ; Conference date: 03-12-2022 Through 07-12-2022",
year = "2022",
doi = "10.1109/IEDM45625.2022.10019321",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "731--734",
booktitle = "2022 International Electron Devices Meeting, IEDM 2022",
address = "United States",
}