Point defects in sputtered NiO films

Wei Luen Jang; Yang Ming Lu; Weng Sing Hwang; Tung Li Hsiung; H. Paul Wang

doi:10.1063/1.3081025

Point defects in sputtered NiO films

Wei Luen Jang, Yang Ming Lu, Weng Sing Hwang, Tung Li Hsiung, H. Paul Wang

Department of Environmental Engineering

Research output: Contribution to journal › Article › peer-review

125 Citations (Scopus)

Abstract

The dominant point defects in p -type NiO films were determined by analyzing the coordination number (CN) change with various annealing temperatures and the composition profile of double-layer films deposited individually in oxygen and in argon atmospheres. The results show that the nonstoichiometry of sputtered NiO film is determined by the number of nickel atoms rather than by the number of oxygen atoms. It is concluded that nickel vacancies are the dominant point defects that result in the electrical conductivity of NiO films.

Original language	English
Article number	062103
Journal	Applied Physics Letters
Volume	94
Issue number	6
DOIs	https://doi.org/10.1063/1.3081025
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3081025

Cite this

@article{48b2ff9a98ca43668adc6743912acc52,

title = "Point defects in sputtered NiO films",

abstract = "The dominant point defects in p -type NiO films were determined by analyzing the coordination number (CN) change with various annealing temperatures and the composition profile of double-layer films deposited individually in oxygen and in argon atmospheres. The results show that the nonstoichiometry of sputtered NiO film is determined by the number of nickel atoms rather than by the number of oxygen atoms. It is concluded that nickel vacancies are the dominant point defects that result in the electrical conductivity of NiO films.",

author = "Jang, {Wei Luen} and Lu, {Yang Ming} and Hwang, {Weng Sing} and Hsiung, {Tung Li} and Wang, {H. Paul}",

note = "Funding Information: The authors would like to thank the National Science Council of Taiwan for financially supporting this research under Grant Nos. NSC 95-2221-E-006-081-MY3 and NSC 96-2221-E-024-020-MY3.",

year = "2009",

doi = "10.1063/1.3081025",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - Point defects in sputtered NiO films

AU - Jang, Wei Luen

AU - Lu, Yang Ming

AU - Hwang, Weng Sing

AU - Hsiung, Tung Li

AU - Wang, H. Paul

N1 - Funding Information: The authors would like to thank the National Science Council of Taiwan for financially supporting this research under Grant Nos. NSC 95-2221-E-006-081-MY3 and NSC 96-2221-E-024-020-MY3.

PY - 2009

Y1 - 2009

N2 - The dominant point defects in p -type NiO films were determined by analyzing the coordination number (CN) change with various annealing temperatures and the composition profile of double-layer films deposited individually in oxygen and in argon atmospheres. The results show that the nonstoichiometry of sputtered NiO film is determined by the number of nickel atoms rather than by the number of oxygen atoms. It is concluded that nickel vacancies are the dominant point defects that result in the electrical conductivity of NiO films.

AB - The dominant point defects in p -type NiO films were determined by analyzing the coordination number (CN) change with various annealing temperatures and the composition profile of double-layer films deposited individually in oxygen and in argon atmospheres. The results show that the nonstoichiometry of sputtered NiO film is determined by the number of nickel atoms rather than by the number of oxygen atoms. It is concluded that nickel vacancies are the dominant point defects that result in the electrical conductivity of NiO films.

UR - http://www.scopus.com/inward/record.url?scp=60349118673&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=60349118673&partnerID=8YFLogxK

U2 - 10.1063/1.3081025

DO - 10.1063/1.3081025

M3 - Article

AN - SCOPUS:60349118673

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 062103

ER -

Point defects in sputtered NiO films

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this