Polarization-induced valence-band alignments at cation- and anion-polar InNGaN heterojunctions

Chung Lin Wu, Hong Mao Lee, Cheng Tai Kuo, Shangjr Gwo, Chia Hung Hsu

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35 Citations (Scopus)


The authors show that the existence of polarization discontinuities at polar III-nitride heterointerfaces can lead to large core-level shifts of photoelectrons and modification of apparent valence-band offsets. In this letter, large Ga core-level shifts, resulting from the interface dipole fields, have been directly measured by photoelectron spectroscopy on InGa -polar (0001)- and N-polar (000 1-) -oriented InNGaN heterojunctions with monolayer abrupt, nearly fully relaxed lattices. Combined with the photoelectron spectroscopic measurements of InN and GaN bulk epilayers, the determined valence-band offsets are 1.04 and 0.54 eV for InGa - and N-polar heterojunctions, respectively.

Original languageEnglish
Article number042112
JournalApplied Physics Letters
Issue number4
Publication statusPublished - 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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