Polarization-induced valence-band alignments at cation- and anion-polar InNGaN heterojunctions

Chung Lin Wu; Hong Mao Lee; Cheng Tai Kuo; Shangjr Gwo; Chia Hung Hsu

doi:10.1063/1.2764448

Polarization-induced valence-band alignments at cation- and anion-polar InNGaN heterojunctions

Chung Lin Wu, Hong Mao Lee, Cheng Tai Kuo, Shangjr Gwo, Chia Hung Hsu

Department of Physics

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

The authors show that the existence of polarization discontinuities at polar III-nitride heterointerfaces can lead to large core-level shifts of photoelectrons and modification of apparent valence-band offsets. In this letter, large Ga core-level shifts, resulting from the interface dipole fields, have been directly measured by photoelectron spectroscopy on InGa -polar (0001)- and N-polar (000 1-) -oriented InNGaN heterojunctions with monolayer abrupt, nearly fully relaxed lattices. Combined with the photoelectron spectroscopic measurements of InN and GaN bulk epilayers, the determined valence-band offsets are 1.04 and 0.54 eV for InGa - and N-polar heterojunctions, respectively.

Original language	English
Article number	042112
Journal	Applied Physics Letters
Volume	91
Issue number	4
DOIs	https://doi.org/10.1063/1.2764448
Publication status	Published - 2007

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2764448

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title = "Polarization-induced valence-band alignments at cation- and anion-polar InNGaN heterojunctions",

abstract = "The authors show that the existence of polarization discontinuities at polar III-nitride heterointerfaces can lead to large core-level shifts of photoelectrons and modification of apparent valence-band offsets. In this letter, large Ga core-level shifts, resulting from the interface dipole fields, have been directly measured by photoelectron spectroscopy on InGa -polar (0001)- and N-polar (000 1-) -oriented InNGaN heterojunctions with monolayer abrupt, nearly fully relaxed lattices. Combined with the photoelectron spectroscopic measurements of InN and GaN bulk epilayers, the determined valence-band offsets are 1.04 and 0.54 eV for InGa - and N-polar heterojunctions, respectively.",

author = "Wu, {Chung Lin} and Lee, {Hong Mao} and Kuo, {Cheng Tai} and Shangjr Gwo and Hsu, {Chia Hung}",

note = "Funding Information: The authors acknowledge National Science Council (NSC), Taiwan for financial support. XRD and PES measurements were performed in National Synchrotron Radiation Research Center (NSRRC), Hsinchu, Taiwan.",

year = "2007",

doi = "10.1063/1.2764448",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Polarization-induced valence-band alignments at cation- and anion-polar InNGaN heterojunctions

AU - Wu, Chung Lin

AU - Lee, Hong Mao

AU - Kuo, Cheng Tai

AU - Gwo, Shangjr

AU - Hsu, Chia Hung

N1 - Funding Information: The authors acknowledge National Science Council (NSC), Taiwan for financial support. XRD and PES measurements were performed in National Synchrotron Radiation Research Center (NSRRC), Hsinchu, Taiwan.

PY - 2007

Y1 - 2007

N2 - The authors show that the existence of polarization discontinuities at polar III-nitride heterointerfaces can lead to large core-level shifts of photoelectrons and modification of apparent valence-band offsets. In this letter, large Ga core-level shifts, resulting from the interface dipole fields, have been directly measured by photoelectron spectroscopy on InGa -polar (0001)- and N-polar (000 1-) -oriented InNGaN heterojunctions with monolayer abrupt, nearly fully relaxed lattices. Combined with the photoelectron spectroscopic measurements of InN and GaN bulk epilayers, the determined valence-band offsets are 1.04 and 0.54 eV for InGa - and N-polar heterojunctions, respectively.

AB - The authors show that the existence of polarization discontinuities at polar III-nitride heterointerfaces can lead to large core-level shifts of photoelectrons and modification of apparent valence-band offsets. In this letter, large Ga core-level shifts, resulting from the interface dipole fields, have been directly measured by photoelectron spectroscopy on InGa -polar (0001)- and N-polar (000 1-) -oriented InNGaN heterojunctions with monolayer abrupt, nearly fully relaxed lattices. Combined with the photoelectron spectroscopic measurements of InN and GaN bulk epilayers, the determined valence-band offsets are 1.04 and 0.54 eV for InGa - and N-polar heterojunctions, respectively.

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ER -

Polarization-induced valence-band alignments at cation- and anion-polar InNGaN heterojunctions

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