Abstract
Raman scattering of individual aluminum nitride (AlN) nanowires is investigated systematically. The axial direction of single nanowire can be rapidly verified by polarized Raman scattering. The angular dependencies of E 2(high) mode show strongly anisotropic behavior in smaller nanowires, which results from optical antenna effect. Raman enhancement (RE) per unit volume of E 2(high) increases with decreasing diameter of nanowires. Compared to the thin film, ∼200-fold increase of RE is observed in AlN nanowires having diameter less than 50 nm, which is far beyond the quantum confinement regime. Such a large RE can be attributed to the effects of resonant cavity and stimulated Raman scattering.
Original language | English |
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Article number | 121902 |
Journal | Applied Physics Letters |
Volume | 101 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2012 Sept 17 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)