Polarized emission and excitonic fine structure energies of InGaN quantum dots

K. F. Karlsson, S. Amloy, Y. T. Chen, K. H. Chen, Hsu-Cheng Hsu, C. L. Hsiao, L. C. Chen, P. O. Holtz

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The linear polarization of the excitonic emission from quantum dot-like potential minima formed in a thin InGaN layer is investigated. The recorded emission lines exhibit significant intensity linearly polarized along the wurtize c-axis. For many of the studied spectra, the excitonic fine-structures were resolved, revealing energy splittings in the order of ∼200 μeV.

Original languageEnglish
Pages (from-to)1553-1555
Number of pages3
JournalPhysica B: Condensed Matter
Volume407
Issue number10
DOIs
Publication statusPublished - 2012 May 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Polarized emission and excitonic fine structure energies of InGaN quantum dots'. Together they form a unique fingerprint.

Cite this