Polymer bilayer films with semi-interpenetrating semiconducting/insulating microstructure for field-effect transistor applications

Fu Chiao Wu, Horng Long Cheng, Yu Ta Chen, Ming Feng Jang, Wei Yang Chou

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We report an unexpected improvement in the microstructural and electrical properties of regioregular poly(3-hexylthiophene) (P3HT) as an active layer in field-effect transistors (FETs) by introducing soft insulating chains from poly(methyl methacrylate) (PMMA) as a cover layer in a solvent mode-dependent manner. A joint experimental and theoretical spectroscopic and electrical analysis is provided to study the P3HT/PMMA bilayer films with semi-interpenetrating semiconducting/insulating interlocked interdiffusion microstructures. Absorption and Raman studies reveal that disordered P3HT chains in films cast from a low-boiling point (bp) solvent favor reorganization into more ordered structures during PMMA covering, thus enhancing the electrical and switch behaviors of FETs. Although high-bp solvents initially create highly crystalline P3HT films, the films are significantly destroyed after the deposition of the PMMA layer, thus dramatically degrading FET characteristics. The semi-interpenetrating semiconducting/insulating microstructures in the designed bilayer films indicate the possibility of ameliorating field-effects in polymer FETs, especially in subthreshold swing and switch on-off behaviors.

Original languageEnglish
Pages (from-to)11103-11110
Number of pages8
JournalSoft Matter
Volume7
Issue number23
DOIs
Publication statusPublished - 2011 Nov 7

Fingerprint

Field effect transistors
Polymethyl Methacrylate
Polymers
field effect transistors
polymethyl methacrylate
microstructure
Microstructure
polymers
Boiling point
boiling
switches
Switches
spectroscopic analysis
casts
Electric properties
coverings
electrical properties
Crystalline materials
poly(3-hexylthiophene)

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics

Cite this

@article{7393d70fe5fa4438836b62cb03d530ee,
title = "Polymer bilayer films with semi-interpenetrating semiconducting/insulating microstructure for field-effect transistor applications",
abstract = "We report an unexpected improvement in the microstructural and electrical properties of regioregular poly(3-hexylthiophene) (P3HT) as an active layer in field-effect transistors (FETs) by introducing soft insulating chains from poly(methyl methacrylate) (PMMA) as a cover layer in a solvent mode-dependent manner. A joint experimental and theoretical spectroscopic and electrical analysis is provided to study the P3HT/PMMA bilayer films with semi-interpenetrating semiconducting/insulating interlocked interdiffusion microstructures. Absorption and Raman studies reveal that disordered P3HT chains in films cast from a low-boiling point (bp) solvent favor reorganization into more ordered structures during PMMA covering, thus enhancing the electrical and switch behaviors of FETs. Although high-bp solvents initially create highly crystalline P3HT films, the films are significantly destroyed after the deposition of the PMMA layer, thus dramatically degrading FET characteristics. The semi-interpenetrating semiconducting/insulating microstructures in the designed bilayer films indicate the possibility of ameliorating field-effects in polymer FETs, especially in subthreshold swing and switch on-off behaviors.",
author = "Wu, {Fu Chiao} and Cheng, {Horng Long} and Chen, {Yu Ta} and Jang, {Ming Feng} and Chou, {Wei Yang}",
year = "2011",
month = "11",
day = "7",
doi = "10.1039/c1sm06289a",
language = "English",
volume = "7",
pages = "11103--11110",
journal = "Soft Matter",
issn = "1744-683X",
publisher = "Royal Society of Chemistry",
number = "23",

}

Polymer bilayer films with semi-interpenetrating semiconducting/insulating microstructure for field-effect transistor applications. / Wu, Fu Chiao; Cheng, Horng Long; Chen, Yu Ta; Jang, Ming Feng; Chou, Wei Yang.

In: Soft Matter, Vol. 7, No. 23, 07.11.2011, p. 11103-11110.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Polymer bilayer films with semi-interpenetrating semiconducting/insulating microstructure for field-effect transistor applications

AU - Wu, Fu Chiao

AU - Cheng, Horng Long

AU - Chen, Yu Ta

AU - Jang, Ming Feng

AU - Chou, Wei Yang

PY - 2011/11/7

Y1 - 2011/11/7

N2 - We report an unexpected improvement in the microstructural and electrical properties of regioregular poly(3-hexylthiophene) (P3HT) as an active layer in field-effect transistors (FETs) by introducing soft insulating chains from poly(methyl methacrylate) (PMMA) as a cover layer in a solvent mode-dependent manner. A joint experimental and theoretical spectroscopic and electrical analysis is provided to study the P3HT/PMMA bilayer films with semi-interpenetrating semiconducting/insulating interlocked interdiffusion microstructures. Absorption and Raman studies reveal that disordered P3HT chains in films cast from a low-boiling point (bp) solvent favor reorganization into more ordered structures during PMMA covering, thus enhancing the electrical and switch behaviors of FETs. Although high-bp solvents initially create highly crystalline P3HT films, the films are significantly destroyed after the deposition of the PMMA layer, thus dramatically degrading FET characteristics. The semi-interpenetrating semiconducting/insulating microstructures in the designed bilayer films indicate the possibility of ameliorating field-effects in polymer FETs, especially in subthreshold swing and switch on-off behaviors.

AB - We report an unexpected improvement in the microstructural and electrical properties of regioregular poly(3-hexylthiophene) (P3HT) as an active layer in field-effect transistors (FETs) by introducing soft insulating chains from poly(methyl methacrylate) (PMMA) as a cover layer in a solvent mode-dependent manner. A joint experimental and theoretical spectroscopic and electrical analysis is provided to study the P3HT/PMMA bilayer films with semi-interpenetrating semiconducting/insulating interlocked interdiffusion microstructures. Absorption and Raman studies reveal that disordered P3HT chains in films cast from a low-boiling point (bp) solvent favor reorganization into more ordered structures during PMMA covering, thus enhancing the electrical and switch behaviors of FETs. Although high-bp solvents initially create highly crystalline P3HT films, the films are significantly destroyed after the deposition of the PMMA layer, thus dramatically degrading FET characteristics. The semi-interpenetrating semiconducting/insulating microstructures in the designed bilayer films indicate the possibility of ameliorating field-effects in polymer FETs, especially in subthreshold swing and switch on-off behaviors.

UR - http://www.scopus.com/inward/record.url?scp=81355135355&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=81355135355&partnerID=8YFLogxK

U2 - 10.1039/c1sm06289a

DO - 10.1039/c1sm06289a

M3 - Article

AN - SCOPUS:81355135355

VL - 7

SP - 11103

EP - 11110

JO - Soft Matter

JF - Soft Matter

SN - 1744-683X

IS - 23

ER -