Polymer flip-chip integrated, AlGaAsSb/AlGaSb p-i-n photodetectors for 1550 nm high-speed optical interconnects

Saurabh K. Lohokare, Chris A. Schuetz, Zhaolin Lu, Dennis W. Prather, Oleg V. Sulima, Jeffery A. Cox, Viktor A. Solov'ev, Sergey V. Ivanov, Jian V. Li

Research output: Contribution to journalConference articlepeer-review

Abstract

AlGaAsSb/AlGaSb heterostructures offer the ability to realize high-performance devices for 1550 nm high-speed optical interconnect applications. In this context, we present the design, fabrication, integration and characterization of 10 GHz p-i-n photodetectors in this material system. This effort has involved an investigation into inductively coupled plasma (ICP) etching of these materials and the development of a novel process for their conductive polymer based flip chip die attach.

Original languageEnglish
Pages (from-to)36-47
Number of pages12
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5353
DOIs
Publication statusPublished - 2004 Aug 16
EventSemiconductor Photodetectors - San Jose, CA, United States
Duration: 2004 Jan 282004 Jan 29

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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