Polymer thin-film transistors with a solution-processed passivation layer

Fu Chiao Wu; Yu Ta Chen; Yaw Wen Jang; Horng Long Cheng

Polymer thin-film transistors with a solution-processed passivation layer

Fu Chiao Wu, Yu Ta Chen, Yaw Wen Jang, Horng Long Cheng

Department of Photonics

Research output: Contribution to conference › Paper › peer-review

Abstract

Poly(3-hexylthiophene)-based (P3HT) thin-film transistors (TFTs) made from different solvents were fabricated. After covering the P3HT active layers with a solution-processed passivation layer, the mobility of P3HT TFTs was enhanced. We suggest that some vacancies in the P3HT active layers should be filled with solvent molecules to promote carrier transport.

Original language	English
Pages	743-746
Number of pages	4
Publication status	Published - 2010
Event	17th International Display Workshops, IDW'10 - Fukuoka, Japan Duration: 2010 Dec 1 → 2010 Dec 3

Other

Other	17th International Display Workshops, IDW'10
Country/Territory	Japan
City	Fukuoka
Period	10-12-01 → 10-12-03

All Science Journal Classification (ASJC) codes

Computer Vision and Pattern Recognition
Human-Computer Interaction

Cite this

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title = "Polymer thin-film transistors with a solution-processed passivation layer",

abstract = "Poly(3-hexylthiophene)-based (P3HT) thin-film transistors (TFTs) made from different solvents were fabricated. After covering the P3HT active layers with a solution-processed passivation layer, the mobility of P3HT TFTs was enhanced. We suggest that some vacancies in the P3HT active layers should be filled with solvent molecules to promote carrier transport.",

author = "Wu, {Fu Chiao} and Chen, {Yu Ta} and Jang, {Yaw Wen} and Cheng, {Horng Long}",

year = "2010",

language = "English",

pages = "743--746",

note = "17th International Display Workshops, IDW'10 ; Conference date: 01-12-2010 Through 03-12-2010",

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TY - CONF

T1 - Polymer thin-film transistors with a solution-processed passivation layer

AU - Wu, Fu Chiao

AU - Chen, Yu Ta

AU - Jang, Yaw Wen

AU - Cheng, Horng Long

PY - 2010

Y1 - 2010

N2 - Poly(3-hexylthiophene)-based (P3HT) thin-film transistors (TFTs) made from different solvents were fabricated. After covering the P3HT active layers with a solution-processed passivation layer, the mobility of P3HT TFTs was enhanced. We suggest that some vacancies in the P3HT active layers should be filled with solvent molecules to promote carrier transport.

AB - Poly(3-hexylthiophene)-based (P3HT) thin-film transistors (TFTs) made from different solvents were fabricated. After covering the P3HT active layers with a solution-processed passivation layer, the mobility of P3HT TFTs was enhanced. We suggest that some vacancies in the P3HT active layers should be filled with solvent molecules to promote carrier transport.

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UR - http://www.scopus.com/inward/citedby.url?scp=79956310515&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:79956310515

SP - 743

EP - 746

T2 - 17th International Display Workshops, IDW'10

Y2 - 1 December 2010 through 3 December 2010

ER -

Polymer thin-film transistors with a solution-processed passivation layer

Abstract

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All Science Journal Classification (ASJC) codes

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