Polymorphic Layered MoTe2 from Semiconductor, Topological Insulator, to Weyl Semimetal

Raman Sankar; G. Narsinga Rao; I. Panneer Muthuselvam; Christopher Butler; Nitesh Kumar; G. Senthil Murugan; Chandra Shekhar; Tay Rong Chang; Cheng Yen Wen; Chun Wei Chen; Wei Li Lee; M. T. Lin; Horng Tay Jeng; Claudia Felser; F. C. Chou

doi:10.1021/acs.chemmater.6b04363

Polymorphic Layered MoTe₂ from Semiconductor, Topological Insulator, to Weyl Semimetal

Raman Sankar, G. Narsinga Rao, I. Panneer Muthuselvam, Christopher Butler, Nitesh Kumar, G. Senthil Murugan, Chandra Shekhar, Tay Rong Chang, Cheng Yen Wen, Chun Wei Chen, Wei Li Lee, M. T. Lin, Horng Tay Jeng, Claudia Felser, F. C. Chou

Department of Physics

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

Large size (∼2 cm) single crystals of layered MoTe₂ in both 2H- and 1T′-types were synthsized using TeBr₄ as the source of Br₂ transport agent in chemical vapor transport growth. The crystal structures of the as-grown single crystals were fully characterized by X-ray diffraction, Raman spectroscopy, scanning transmission electron microscopy, scanning tunneling microscopy (STM), and electrical resistivity (ρ) measurements. The resistivity ρ(T), magnetic susceptibility χ(T), and heat capacity C_p(T) measurement results reveal a first order structural phase transition near ∼240 K for 1T′-MoTe₂, which has been identified to be the orthorhombic Td-phase of MoTe₂ as a candidate of Weyl semimetal. The STM study revealed different local defect geometries found on the surface of 2H- and Td-types of MoTe₆ units in trigonal prismatic and distorted octahedral coordination, respectively.

Original language	English
Pages (from-to)	699-707
Number of pages	9
Journal	Chemistry of Materials
Volume	29
Issue number	2
DOIs	https://doi.org/10.1021/acs.chemmater.6b04363
Publication status	Published - 2017 Jan 24

All Science Journal Classification (ASJC) codes

Chemistry(all)
Chemical Engineering(all)
Materials Chemistry

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Sankar, R., Narsinga Rao, G., Muthuselvam, I. P., Butler, C., Kumar, N., Senthil Murugan, G., Shekhar, C., Chang, T. R., Wen, C. Y., Chen, C. W., Lee, W. L., Lin, M. T., Jeng, H. T., Felser, C., & Chou, F. C. (2017). Polymorphic Layered MoTe₂ from Semiconductor, Topological Insulator, to Weyl Semimetal. Chemistry of Materials, 29(2), 699-707. https://doi.org/10.1021/acs.chemmater.6b04363

Sankar, Raman ; Narsinga Rao, G. ; Muthuselvam, I. Panneer ; Butler, Christopher ; Kumar, Nitesh ; Senthil Murugan, G. ; Shekhar, Chandra ; Chang, Tay Rong ; Wen, Cheng Yen ; Chen, Chun Wei ; Lee, Wei Li ; Lin, M. T. ; Jeng, Horng Tay ; Felser, Claudia ; Chou, F. C. / Polymorphic Layered MoTe₂ from Semiconductor, Topological Insulator, to Weyl Semimetal. In: Chemistry of Materials. 2017 ; Vol. 29, No. 2. pp. 699-707.

@article{e7f0fd4e832b4740ae51b7ba1a708b25,

title = "Polymorphic Layered MoTe2 from Semiconductor, Topological Insulator, to Weyl Semimetal",

abstract = "Large size (∼2 cm) single crystals of layered MoTe2 in both 2H- and 1T′-types were synthsized using TeBr4 as the source of Br2 transport agent in chemical vapor transport growth. The crystal structures of the as-grown single crystals were fully characterized by X-ray diffraction, Raman spectroscopy, scanning transmission electron microscopy, scanning tunneling microscopy (STM), and electrical resistivity (ρ) measurements. The resistivity ρ(T), magnetic susceptibility χ(T), and heat capacity Cp(T) measurement results reveal a first order structural phase transition near ∼240 K for 1T′-MoTe2, which has been identified to be the orthorhombic Td-phase of MoTe2 as a candidate of Weyl semimetal. The STM study revealed different local defect geometries found on the surface of 2H- and Td-types of MoTe6 units in trigonal prismatic and distorted octahedral coordination, respectively.",

author = "Raman Sankar and {Narsinga Rao}, G. and Muthuselvam, {I. Panneer} and Christopher Butler and Nitesh Kumar and {Senthil Murugan}, G. and Chandra Shekhar and Chang, {Tay Rong} and Wen, {Cheng Yen} and Chen, {Chun Wei} and Lee, {Wei Li} and Lin, {M. T.} and Jeng, {Horng Tay} and Claudia Felser and Chou, {F. C.}",

year = "2017",

month = jan,

day = "24",

doi = "10.1021/acs.chemmater.6b04363",

language = "English",

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pages = "699--707",

journal = "Chemistry of Materials",

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Sankar, R, Narsinga Rao, G, Muthuselvam, IP, Butler, C, Kumar, N, Senthil Murugan, G, Shekhar, C, Chang, TR, Wen, CY, Chen, CW, Lee, WL, Lin, MT, Jeng, HT, Felser, C & Chou, FC 2017, 'Polymorphic Layered MoTe₂ from Semiconductor, Topological Insulator, to Weyl Semimetal', Chemistry of Materials, vol. 29, no. 2, pp. 699-707. https://doi.org/10.1021/acs.chemmater.6b04363

Polymorphic Layered MoTe₂ from Semiconductor, Topological Insulator, to Weyl Semimetal. / Sankar, Raman; Narsinga Rao, G.; Muthuselvam, I. Panneer; Butler, Christopher; Kumar, Nitesh; Senthil Murugan, G.; Shekhar, Chandra; Chang, Tay Rong; Wen, Cheng Yen; Chen, Chun Wei; Lee, Wei Li; Lin, M. T.; Jeng, Horng Tay; Felser, Claudia; Chou, F. C.

In: Chemistry of Materials, Vol. 29, No. 2, 24.01.2017, p. 699-707.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Polymorphic Layered MoTe2 from Semiconductor, Topological Insulator, to Weyl Semimetal

AU - Sankar, Raman

AU - Narsinga Rao, G.

AU - Muthuselvam, I. Panneer

AU - Butler, Christopher

AU - Kumar, Nitesh

AU - Senthil Murugan, G.

AU - Shekhar, Chandra

AU - Chang, Tay Rong

AU - Wen, Cheng Yen

AU - Chen, Chun Wei

AU - Lee, Wei Li

AU - Lin, M. T.

AU - Jeng, Horng Tay

AU - Felser, Claudia

AU - Chou, F. C.

PY - 2017/1/24

Y1 - 2017/1/24

N2 - Large size (∼2 cm) single crystals of layered MoTe2 in both 2H- and 1T′-types were synthsized using TeBr4 as the source of Br2 transport agent in chemical vapor transport growth. The crystal structures of the as-grown single crystals were fully characterized by X-ray diffraction, Raman spectroscopy, scanning transmission electron microscopy, scanning tunneling microscopy (STM), and electrical resistivity (ρ) measurements. The resistivity ρ(T), magnetic susceptibility χ(T), and heat capacity Cp(T) measurement results reveal a first order structural phase transition near ∼240 K for 1T′-MoTe2, which has been identified to be the orthorhombic Td-phase of MoTe2 as a candidate of Weyl semimetal. The STM study revealed different local defect geometries found on the surface of 2H- and Td-types of MoTe6 units in trigonal prismatic and distorted octahedral coordination, respectively.

AB - Large size (∼2 cm) single crystals of layered MoTe2 in both 2H- and 1T′-types were synthsized using TeBr4 as the source of Br2 transport agent in chemical vapor transport growth. The crystal structures of the as-grown single crystals were fully characterized by X-ray diffraction, Raman spectroscopy, scanning transmission electron microscopy, scanning tunneling microscopy (STM), and electrical resistivity (ρ) measurements. The resistivity ρ(T), magnetic susceptibility χ(T), and heat capacity Cp(T) measurement results reveal a first order structural phase transition near ∼240 K for 1T′-MoTe2, which has been identified to be the orthorhombic Td-phase of MoTe2 as a candidate of Weyl semimetal. The STM study revealed different local defect geometries found on the surface of 2H- and Td-types of MoTe6 units in trigonal prismatic and distorted octahedral coordination, respectively.

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DO - 10.1021/acs.chemmater.6b04363

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JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

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Polymorphic Layered MoTe₂ from Semiconductor, Topological Insulator, to Weyl Semimetal

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