Polymorphic Layered MoTe2 from Semiconductor, Topological Insulator, to Weyl Semimetal

Raman Sankar, G. Narsinga Rao, I. Panneer Muthuselvam, Christopher Butler, Nitesh Kumar, G. Senthil Murugan, Chandra Shekhar, Tay Rong Chang, Cheng Yen Wen, Chun Wei Chen, Wei Li Lee, M. T. Lin, Horng Tay Jeng, Claudia Felser, F. C. Chou

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20 Citations (Scopus)

Abstract

Large size (∼2 cm) single crystals of layered MoTe2 in both 2H- and 1T′-types were synthsized using TeBr4 as the source of Br2 transport agent in chemical vapor transport growth. The crystal structures of the as-grown single crystals were fully characterized by X-ray diffraction, Raman spectroscopy, scanning transmission electron microscopy, scanning tunneling microscopy (STM), and electrical resistivity (ρ) measurements. The resistivity ρ(T), magnetic susceptibility χ(T), and heat capacity Cp(T) measurement results reveal a first order structural phase transition near ∼240 K for 1T′-MoTe2, which has been identified to be the orthorhombic Td-phase of MoTe2 as a candidate of Weyl semimetal. The STM study revealed different local defect geometries found on the surface of 2H- and Td-types of MoTe6 units in trigonal prismatic and distorted octahedral coordination, respectively.

Original languageEnglish
Pages (from-to)699-707
Number of pages9
JournalChemistry of Materials
Volume29
Issue number2
DOIs
Publication statusPublished - 2017 Jan 24

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

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