Porous silicon NDR-based high power RF oscillator diode

Jia Chuan Lin, Liang Fangg Wan, Kuan Wen Liu, Kuo Chang Lo, Mei Ling Yeh, Shui-Jinn Wang

Research output: Contribution to journalArticle

Abstract

A high power oscillation occurring on a porous silicon diode with an obvious dc N-shaped negative differential resistance (NDR) at room temperature is presented for the first time. The voltage oscillation swing was up to 12.4 V and oscillation frequency was 101.3 kHz, which belongs to the radio frequency range. The oscillation was based on a porous silicon superlattice diode structure, which was observed to provide a stable NDR with a high peak-to-valley current ratio as high as 7.9 for dc current-voltage characteristics at room temperature. A superlattice diode structure was formed by an electrochemical etching method on an n-type (100) silicon wafer with an alternating etching current. In addition, a dc constant current source was used as the power supply for the diode oscillation. In particular, two steady operating points were observed for the dc NDR current-voltage characteristics of the circuit load line. The system produced a steady oscillation between these two operating points in a harmonic form.

Original languageEnglish
Article number7895165
Pages (from-to)701-704
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number6
DOIs
Publication statusPublished - 2017 Jun 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Lin, J. C., Wan, L. F., Liu, K. W., Lo, K. C., Yeh, M. L., & Wang, S-J. (2017). Porous silicon NDR-based high power RF oscillator diode. IEEE Electron Device Letters, 38(6), 701-704. [7895165]. https://doi.org/10.1109/LED.2017.2692768