Positioning effect of type-II GaSb/GaAs quantum ring layer on solar cell performances

Shun Chieh Hsu; Yin Han Chen; Hsuan An Chen; Shih Yen Lin; Tien Lin Shen; Hao Chung Kuo; Cheng Lun Shih; Jinn-Kong Sheu; Chien Chung Lin

doi:10.1109/PVSC.2015.7355811

Positioning effect of type-II GaSb/GaAs quantum ring layer on solar cell performances

Shun Chieh Hsu, Yin Han Chen, Hsuan An Chen, Shih Yen Lin, Tien Lin Shen, Hao Chung Kuo, Cheng Lun Shih, Jinn-Kong Sheu, Chien Chung Lin

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

In this work, we demonstrate the positioning effect of the type-II quantum ring (QR) on the solar cell efficiencies. The QR layer was placed in either p-type or n-type region to test its effect on the performance. Under one Sun condition, the one with p-type QR layer has better efficiency and open-circuit voltage. But this advantage loses quickly when the sunlight is concentrated over 20 times. From the concentrated sunlight measurement, the sample with QR layer in the n-type region can sustain the Voc reduction until 80 Suns.

Original language	English
Title of host publication	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479979448
DOIs	https://doi.org/10.1109/PVSC.2015.7355811
Publication status	Published - 2015 Dec 14
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 2015 Jun 14 → 2015 Jun 19

Publication series

Name	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Other

Other	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country	United States
City	New Orleans
Period	15-06-14 → 15-06-19

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2015.7355811

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Hsu, S. C., Chen, Y. H., Chen, H. A., Lin, S. Y., Shen, T. L., Kuo, H. C., Shih, C. L., Sheu, J-K., & Lin, C. C. (2015). Positioning effect of type-II GaSb/GaAs quantum ring layer on solar cell performances. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 [7355811] (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7355811

Hsu, Shun Chieh ; Chen, Yin Han ; Chen, Hsuan An ; Lin, Shih Yen ; Shen, Tien Lin ; Kuo, Hao Chung ; Shih, Cheng Lun ; Sheu, Jinn-Kong ; Lin, Chien Chung. / Positioning effect of type-II GaSb/GaAs quantum ring layer on solar cell performances. 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015).

@inproceedings{1820ba0bc11e4b90bd578db71864d2f0,

title = "Positioning effect of type-II GaSb/GaAs quantum ring layer on solar cell performances",

abstract = "In this work, we demonstrate the positioning effect of the type-II quantum ring (QR) on the solar cell efficiencies. The QR layer was placed in either p-type or n-type region to test its effect on the performance. Under one Sun condition, the one with p-type QR layer has better efficiency and open-circuit voltage. But this advantage loses quickly when the sunlight is concentrated over 20 times. From the concentrated sunlight measurement, the sample with QR layer in the n-type region can sustain the Voc reduction until 80 Suns.",

author = "Hsu, {Shun Chieh} and Chen, {Yin Han} and Chen, {Hsuan An} and Lin, {Shih Yen} and Shen, {Tien Lin} and Kuo, {Hao Chung} and Shih, {Cheng Lun} and Jinn-Kong Sheu and Lin, {Chien Chung}",

year = "2015",

month = dec,

day = "14",

doi = "10.1109/PVSC.2015.7355811",

language = "English",

series = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",

address = "United States",

note = "42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",

}

Hsu, SC, Chen, YH, Chen, HA, Lin, SY, Shen, TL, Kuo, HC, Shih, CL, Sheu, J-K & Lin, CC 2015, Positioning effect of type-II GaSb/GaAs quantum ring layer on solar cell performances. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7355811, 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 15-06-14. https://doi.org/10.1109/PVSC.2015.7355811

Positioning effect of type-II GaSb/GaAs quantum ring layer on solar cell performances. / Hsu, Shun Chieh; Chen, Yin Han; Chen, Hsuan An; Lin, Shih Yen; Shen, Tien Lin; Kuo, Hao Chung; Shih, Cheng Lun; Sheu, Jinn-Kong; Lin, Chien Chung.

2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7355811 (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Positioning effect of type-II GaSb/GaAs quantum ring layer on solar cell performances

AU - Hsu, Shun Chieh

AU - Chen, Yin Han

AU - Chen, Hsuan An

AU - Lin, Shih Yen

AU - Shen, Tien Lin

AU - Kuo, Hao Chung

AU - Shih, Cheng Lun

AU - Sheu, Jinn-Kong

AU - Lin, Chien Chung

PY - 2015/12/14

Y1 - 2015/12/14

N2 - In this work, we demonstrate the positioning effect of the type-II quantum ring (QR) on the solar cell efficiencies. The QR layer was placed in either p-type or n-type region to test its effect on the performance. Under one Sun condition, the one with p-type QR layer has better efficiency and open-circuit voltage. But this advantage loses quickly when the sunlight is concentrated over 20 times. From the concentrated sunlight measurement, the sample with QR layer in the n-type region can sustain the Voc reduction until 80 Suns.

AB - In this work, we demonstrate the positioning effect of the type-II quantum ring (QR) on the solar cell efficiencies. The QR layer was placed in either p-type or n-type region to test its effect on the performance. Under one Sun condition, the one with p-type QR layer has better efficiency and open-circuit voltage. But this advantage loses quickly when the sunlight is concentrated over 20 times. From the concentrated sunlight measurement, the sample with QR layer in the n-type region can sustain the Voc reduction until 80 Suns.

UR - http://www.scopus.com/inward/record.url?scp=84961589866&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84961589866&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2015.7355811

DO - 10.1109/PVSC.2015.7355811

M3 - Conference contribution

AN - SCOPUS:84961589866

T3 - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015

Y2 - 14 June 2015 through 19 June 2015

ER -

Hsu SC, Chen YH, Chen HA, Lin SY, Shen TL, Kuo HC et al. Positioning effect of type-II GaSb/GaAs quantum ring layer on solar cell performances. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7355811. (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). https://doi.org/10.1109/PVSC.2015.7355811