Postannealing effect on ITO/p+-GaP with a diffused layer

H. M. Lo; S. C. Shei; X. F. Zeng; S. J. Chang; H. Y. Lin

doi:10.1149/1.3559190

Postannealing effect on ITO/p⁺-GaP with a diffused layer

H. M. Lo
, S. C. Shei
, X. F. Zeng
, S. J. Chang
, H. Y. Lin

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this study, indium tin oxide (ITO) films were deposited on p-type GaP films with a AuBe diffused metal layer to form ohmic contacts. Without the AuBe diffused into p-GaP films, the ITO deposited on p-GaP showed a non-ohmic characteristic. After the AuBe diffused, the ITO deposited on p-GaP displayed a linear current-voltage characteristic and the specific contact resistance showed 2.63 10^-4 ω cm²⁺. Furthermore, the specific contact resistance could be improved to 1.57 10^-4 ωcm²⁺ when the sample post-annealed at 400C. The transmittance of ITO film almost was kept at 90% in the wavelength range of 400-700 nm after thermal annealing. These results revealed that the ITO films can be a suitable transparent current spreading layer for the fabrication of AlGaInP-based light-emitting diodes with a AuBe diffused metal layer.

Original language	English
Pages (from-to)	H506-H509
Journal	Journal of the Electrochemical Society
Volume	158
Issue number	5
DOIs	https://doi.org/10.1149/1.3559190
Publication status	Published - 2011

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Surfaces, Coatings and Films
Electrochemistry
Renewable Energy, Sustainability and the Environment

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.3559190

Cite this

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title = "Postannealing effect on ITO/p+-GaP with a diffused layer",

abstract = "In this study, indium tin oxide (ITO) films were deposited on p-type GaP films with a AuBe diffused metal layer to form ohmic contacts. Without the AuBe diffused into p-GaP films, the ITO deposited on p-GaP showed a non-ohmic characteristic. After the AuBe diffused, the ITO deposited on p-GaP displayed a linear current-voltage characteristic and the specific contact resistance showed 2.63 10-4 ω cm2+. Furthermore, the specific contact resistance could be improved to 1.57 10-4 ωcm2+ when the sample post-annealed at 400C. The transmittance of ITO film almost was kept at 90\% in the wavelength range of 400-700 nm after thermal annealing. These results revealed that the ITO films can be a suitable transparent current spreading layer for the fabrication of AlGaInP-based light-emitting diodes with a AuBe diffused metal layer.",

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T1 - Postannealing effect on ITO/p+-GaP with a diffused layer

AU - Lo, H. M.

AU - Shei, S. C.

AU - Zeng, X. F.

AU - Chang, S. J.

AU - Lin, H. Y.

PY - 2011

Y1 - 2011

N2 - In this study, indium tin oxide (ITO) films were deposited on p-type GaP films with a AuBe diffused metal layer to form ohmic contacts. Without the AuBe diffused into p-GaP films, the ITO deposited on p-GaP showed a non-ohmic characteristic. After the AuBe diffused, the ITO deposited on p-GaP displayed a linear current-voltage characteristic and the specific contact resistance showed 2.63 10-4 ω cm2+. Furthermore, the specific contact resistance could be improved to 1.57 10-4 ωcm2+ when the sample post-annealed at 400C. The transmittance of ITO film almost was kept at 90% in the wavelength range of 400-700 nm after thermal annealing. These results revealed that the ITO films can be a suitable transparent current spreading layer for the fabrication of AlGaInP-based light-emitting diodes with a AuBe diffused metal layer.

AB - In this study, indium tin oxide (ITO) films were deposited on p-type GaP films with a AuBe diffused metal layer to form ohmic contacts. Without the AuBe diffused into p-GaP films, the ITO deposited on p-GaP showed a non-ohmic characteristic. After the AuBe diffused, the ITO deposited on p-GaP displayed a linear current-voltage characteristic and the specific contact resistance showed 2.63 10-4 ω cm2+. Furthermore, the specific contact resistance could be improved to 1.57 10-4 ωcm2+ when the sample post-annealed at 400C. The transmittance of ITO film almost was kept at 90% in the wavelength range of 400-700 nm after thermal annealing. These results revealed that the ITO films can be a suitable transparent current spreading layer for the fabrication of AlGaInP-based light-emitting diodes with a AuBe diffused metal layer.

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