TY - JOUR
T1 - Postoxidation thermal annealing effects of liquid phase deposited TiO2 on (NH4)2Sx-treated AlGaAs
AU - Hu, Chih Chun
AU - Lee, Tai Lung
AU - Zou, Yong Jie
AU - Lee, Kuan Wei
AU - Wang, Yeong Her
N1 - Funding Information:
The authors would like to thank Dr. Tsu-Yi Wu of the National Cheng-Kung University for his discussion and support. This work was also supported in part by the National Science Council of Taiwan under the contract no., NSC 99-2221-E-214-067 .
Publisher Copyright:
© 2014 Elsevier B.V. All rights reserved.
PY - 2014/7/31
Y1 - 2014/7/31
N2 - Liquid phase deposition (LPD) was performed to fabricate titanium dioxide (TiO2) on AlGaAs by using ammonium sulfide pretreatment. In addition, the study investigated how postoxidation rapid thermal annealing (RTA) affected the LPD-TiO2 on (NH4)2Sx-treated AlGaAs. The deposition rate of the as-deposited LPD-TiO2 for the 10 min 5% (NH4)2Sx-treated AlGaAs was approximately 126 nm/h. Following the 10 min 5% (NH4)2Sx pretreatment and a postoxidation RTA at 350°C for 1 min, the root mean square value, leakage current density at 0 MV/cm, interface trap density, and flat-band voltage shift were improved to 6.20, 5.64 × 10-8 A/cm2, 6.48 × 1011 cm-2 eV-1, and 1.5 V, respectively.
AB - Liquid phase deposition (LPD) was performed to fabricate titanium dioxide (TiO2) on AlGaAs by using ammonium sulfide pretreatment. In addition, the study investigated how postoxidation rapid thermal annealing (RTA) affected the LPD-TiO2 on (NH4)2Sx-treated AlGaAs. The deposition rate of the as-deposited LPD-TiO2 for the 10 min 5% (NH4)2Sx-treated AlGaAs was approximately 126 nm/h. Following the 10 min 5% (NH4)2Sx pretreatment and a postoxidation RTA at 350°C for 1 min, the root mean square value, leakage current density at 0 MV/cm, interface trap density, and flat-band voltage shift were improved to 6.20, 5.64 × 10-8 A/cm2, 6.48 × 1011 cm-2 eV-1, and 1.5 V, respectively.
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U2 - 10.1016/j.tsf.2014.04.010
DO - 10.1016/j.tsf.2014.04.010
M3 - Article
AN - SCOPUS:84908079273
SN - 0040-6090
VL - 563
SP - 40
EP - 43
JO - Thin Solid Films
JF - Thin Solid Films
ER -