Power-frequency scaling of multi-layered microwave devices

B. Jogai; K. L. Wang; G. P. Li; R. Abdeshaah

doi:10.1016/0749-6036(85)90090-4

Power-frequency scaling of multi-layered microwave devices

B. Jogai, K. L. Wang, G. P. Li, R. Abdeshaah

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

Abstract

The r.f. power obtainable from transit-time devices is shown to increase if they are stacked in series. The power-frequency scaling was obtained for both cases of electronic and thermal dissipation limits. It is demonstrated that the advantage of using multi-layered devices lies at at higher frequencies.

Original language	English
Pages (from-to)	299-302
Number of pages	4
Journal	Superlattices and Microstructures
Volume	1
Issue number	4
DOIs	https://doi.org/10.1016/0749-6036(85)90090-4
Publication status	Published - 1985

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/0749-6036(85)90090-4

Cite this

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title = "Power-frequency scaling of multi-layered microwave devices",

abstract = "The r.f. power obtainable from transit-time devices is shown to increase if they are stacked in series. The power-frequency scaling was obtained for both cases of electronic and thermal dissipation limits. It is demonstrated that the advantage of using multi-layered devices lies at at higher frequencies.",

author = "B. Jogai and Wang, {K. L.} and Li, {G. P.} and R. Abdeshaah",

note = "Funding Information: ACKNOWLEDGMEN-T This work was in part supported by the U. S. Army Research Office under contract DAAG-29-83-K-0070.",

year = "1985",

doi = "10.1016/0749-6036(85)90090-4",

language = "English",

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T1 - Power-frequency scaling of multi-layered microwave devices

AU - Jogai, B.

AU - Wang, K. L.

AU - Li, G. P.

AU - Abdeshaah, R.

N1 - Funding Information: ACKNOWLEDGMEN-T This work was in part supported by the U. S. Army Research Office under contract DAAG-29-83-K-0070.

PY - 1985

Y1 - 1985

N2 - The r.f. power obtainable from transit-time devices is shown to increase if they are stacked in series. The power-frequency scaling was obtained for both cases of electronic and thermal dissipation limits. It is demonstrated that the advantage of using multi-layered devices lies at at higher frequencies.

AB - The r.f. power obtainable from transit-time devices is shown to increase if they are stacked in series. The power-frequency scaling was obtained for both cases of electronic and thermal dissipation limits. It is demonstrated that the advantage of using multi-layered devices lies at at higher frequencies.

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ER -

Power-frequency scaling of multi-layered microwave devices

Abstract

All Science Journal Classification (ASJC) codes

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