Precipitation analysis on P-implanted silicon by reflectivity spectrum

Shih An Huang, Kuang Yao Lo, Li Hsuan Hsu, Kuang Ming Hung

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Reflectivity measurement is used to investigate the precipitation of low-energy phosphorous (P)-implanted Si(111) followed by rapid thermal annealing (RTA). The electrically activated dopant concentration near the surface broadens the critical point peaks and shifts them toward low-photon energy side. The redshift of the E2 peak in the imaginary part of dielectric function is a function of the annealing condition and is strongly related to the electrically activated dopant concentration. The precipitation of P atoms, which arises from the excess P atoms in silicon at lower RTA temperature, is observed through the reflectivity spectrum and theoretical inference.

Original languageEnglish
Article number061901
JournalApplied Physics Letters
Issue number6
Publication statusPublished - 2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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