Preferential coalescence of nanocrystalline silicon on different film substrates

C. Y. Lin; Y. K. Fang; S. F. Chen; C. S. Lin; T. H. Chou; S. B. Hwang; J. S. Hwang; K. I. Lin

doi:10.1016/j.jnoncrysol.2005.11.006

Preferential coalescence of nanocrystalline silicon on different film substrates

C. Y. Lin, Y. K. Fang, S. F. Chen, C. S. Lin, T. H. Chou, S. B. Hwang, J. S. Hwang, K. I. Lin

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The characteristics of nanocrystalline silicon deposited on different film substrates were studied. Through atomic force microscopy, field emission scanning electron microscopy, Raman scattering and Hall effect measurements, we investigated and compared the morphology, columnar grain size, crystallinity and Hall mobility of nanocrystalline silicon on different film substrates. The mechanisms affecting the characteristics of nanocrystalline silicon deposited to different substrates were studied in detail.

Original language	English
Pages (from-to)	44-50
Number of pages	7
Journal	Journal of Non-Crystalline Solids
Volume	352
Issue number	1
DOIs	https://doi.org/10.1016/j.jnoncrysol.2005.11.006
Publication status	Published - 2006 Jan 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/j.jnoncrysol.2005.11.006

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title = "Preferential coalescence of nanocrystalline silicon on different film substrates",

abstract = "The characteristics of nanocrystalline silicon deposited on different film substrates were studied. Through atomic force microscopy, field emission scanning electron microscopy, Raman scattering and Hall effect measurements, we investigated and compared the morphology, columnar grain size, crystallinity and Hall mobility of nanocrystalline silicon on different film substrates. The mechanisms affecting the characteristics of nanocrystalline silicon deposited to different substrates were studied in detail.",

author = "Lin, {C. Y.} and Fang, {Y. K.} and Chen, {S. F.} and Lin, {C. S.} and Chou, {T. H.} and Hwang, {S. B.} and Hwang, {J. S.} and Lin, {K. I.}",

note = "Funding Information: We thank the financial support from the National Science Council under Contracts NSC93-2215-E-006-005.",

year = "2006",

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doi = "10.1016/j.jnoncrysol.2005.11.006",

language = "English",

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TY - JOUR

T1 - Preferential coalescence of nanocrystalline silicon on different film substrates

AU - Lin, C. Y.

AU - Fang, Y. K.

AU - Chen, S. F.

AU - Lin, C. S.

AU - Chou, T. H.

AU - Hwang, S. B.

AU - Hwang, J. S.

AU - Lin, K. I.

N1 - Funding Information: We thank the financial support from the National Science Council under Contracts NSC93-2215-E-006-005.

PY - 2006/1/1

Y1 - 2006/1/1

N2 - The characteristics of nanocrystalline silicon deposited on different film substrates were studied. Through atomic force microscopy, field emission scanning electron microscopy, Raman scattering and Hall effect measurements, we investigated and compared the morphology, columnar grain size, crystallinity and Hall mobility of nanocrystalline silicon on different film substrates. The mechanisms affecting the characteristics of nanocrystalline silicon deposited to different substrates were studied in detail.

AB - The characteristics of nanocrystalline silicon deposited on different film substrates were studied. Through atomic force microscopy, field emission scanning electron microscopy, Raman scattering and Hall effect measurements, we investigated and compared the morphology, columnar grain size, crystallinity and Hall mobility of nanocrystalline silicon on different film substrates. The mechanisms affecting the characteristics of nanocrystalline silicon deposited to different substrates were studied in detail.

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UR - http://www.scopus.com/inward/citedby.url?scp=29244434066&partnerID=8YFLogxK

U2 - 10.1016/j.jnoncrysol.2005.11.006

DO - 10.1016/j.jnoncrysol.2005.11.006

M3 - Article

AN - SCOPUS:29244434066

VL - 352

SP - 44

EP - 50

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

IS - 1

ER -

Preferential coalescence of nanocrystalline silicon on different film substrates

Abstract

All Science Journal Classification (ASJC) codes

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