Preferential coalescence of nanocrystalline silicon on different film substrates

C. Y. Lin, Y. K. Fang, S. F. Chen, C. S. Lin, T. H. Chou, S. B. Hwang, J. S. Hwang, K. I. Lin

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The characteristics of nanocrystalline silicon deposited on different film substrates were studied. Through atomic force microscopy, field emission scanning electron microscopy, Raman scattering and Hall effect measurements, we investigated and compared the morphology, columnar grain size, crystallinity and Hall mobility of nanocrystalline silicon on different film substrates. The mechanisms affecting the characteristics of nanocrystalline silicon deposited to different substrates were studied in detail.

Original languageEnglish
Pages (from-to)44-50
Number of pages7
JournalJournal of Non-Crystalline Solids
Volume352
Issue number1
DOIs
Publication statusPublished - 2006 Jan 1

Fingerprint

Nanocrystalline silicon
Coalescence
coalescing
silicon
Substrates
Hall mobility
Hall effect
Field emission
Raman scattering
field emission
Atomic force microscopy
crystallinity
grain size
atomic force microscopy
Raman spectra
Scanning electron microscopy
scanning electron microscopy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Lin, C. Y. ; Fang, Y. K. ; Chen, S. F. ; Lin, C. S. ; Chou, T. H. ; Hwang, S. B. ; Hwang, J. S. ; Lin, K. I. / Preferential coalescence of nanocrystalline silicon on different film substrates. In: Journal of Non-Crystalline Solids. 2006 ; Vol. 352, No. 1. pp. 44-50.
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Preferential coalescence of nanocrystalline silicon on different film substrates. / Lin, C. Y.; Fang, Y. K.; Chen, S. F.; Lin, C. S.; Chou, T. H.; Hwang, S. B.; Hwang, J. S.; Lin, K. I.

In: Journal of Non-Crystalline Solids, Vol. 352, No. 1, 01.01.2006, p. 44-50.

Research output: Contribution to journalArticle

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