TY - JOUR
T1 - Preparation and analysis of silicon negative differential resistance diodes with porous superlattice structure
AU - Wang, Shui-Jinn
AU - Tsai, Hao Yi
AU - Lin, Hung Jen
PY - 1998/3/1
Y1 - 1998/3/1
N2 - In this paper, the preparation and electrical properties of silicon porous superlattice (SPS) negative differential resistance (NDR) diodes are presented. Two different methods (namely, method A and method B) were employed for the fabrication of SPSs. In method A, the anodization was performed under periodical ultraviolet (UV) illumination while in method B, the anodization was carried out under periodical modulation of the etching current density. For both types of SPS diodes, strong NDR with a peak-to-valley current ratio in the range of 2.6-5.1 was observed at room temperature. It was presumed that a resonant tunneling mechanism analogous to that which occurs in conventional resonant tunneling diodes with a double barrier or a superlattice structure might have been responsible for the observation results. The influence of the UV illumination interval in method A and the low current interval in method B on the NDR characteristics of the SPS diodes are discussed. In addition, the photo sensitive NDR characteristics of SPS diodes using method B are also reported.
AB - In this paper, the preparation and electrical properties of silicon porous superlattice (SPS) negative differential resistance (NDR) diodes are presented. Two different methods (namely, method A and method B) were employed for the fabrication of SPSs. In method A, the anodization was performed under periodical ultraviolet (UV) illumination while in method B, the anodization was carried out under periodical modulation of the etching current density. For both types of SPS diodes, strong NDR with a peak-to-valley current ratio in the range of 2.6-5.1 was observed at room temperature. It was presumed that a resonant tunneling mechanism analogous to that which occurs in conventional resonant tunneling diodes with a double barrier or a superlattice structure might have been responsible for the observation results. The influence of the UV illumination interval in method A and the low current interval in method B on the NDR characteristics of the SPS diodes are discussed. In addition, the photo sensitive NDR characteristics of SPS diodes using method B are also reported.
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M3 - Article
AN - SCOPUS:0032026369
SN - 0255-6588
VL - 22
SP - 235
EP - 242
JO - Proceedings of the National Science Council, Republic of China, Part A: Physical Science and Engineering
JF - Proceedings of the National Science Council, Republic of China, Part A: Physical Science and Engineering
IS - 2
ER -