Preparation and characterization of single-phase SiC nanotubes and C-SiC coaxial nanotubes

Tomitsugu Taguchi, Naoki Igawa, Hiroyuki Yamamoto, Shin Ichi Shamoto, Shiro Jitsukawa

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81 Citations (Scopus)

Abstract

Preparation conditions of single-phase SiC nanotubes and C-SiC coaxial nanotubes were investigated. The characterization of single-phase SiC nanotubes and C-SiC coaxial nanotubes were carried out. The SiC nanowires, which were made of the catenated SiC grains of 50-200 nm in diameter, were obtained in carbon nanotubes reacted at 1450 °C. The only C-SiC coaxial nanotubes were formed at 1300°C. A few single-phase SiC nantoubes were synthesized at 1200°C for 100 h. More than half number of nanotubes reacted at 1200°C for 100 h were altered to single-phase SiC nantoubes by heat treatment of 600°C for 1 h in air since the remained carbon was removed. The energy dispersive X-ray spectroscopy analysis revealed that the atomic ratio of Si to C in single-phase SiC nanotubes was almost 1; these single-phase SiC nanotubes consisted of near-stoichiometric SiC grains.

Original languageEnglish
Pages (from-to)431-438
Number of pages8
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume28
Issue number4
DOIs
Publication statusPublished - 2005 Sep

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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