TY - JOUR
T1 - Preparation and characterization of transparent semiconductor RuO 2-SiO2 films synthesized by sol-gel route
AU - Jeng, Jiann Shing
AU - Lin, Yun Ting
AU - Chen, J. S.
N1 - Funding Information:
The authors gratefully acknowledge the financial support from the National Science Council of Taiwan, R. O. C. (Grant no. 94-2216-E-269-001 and Grant no. 96-2628-E-006-013-MY3 ).
Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2010/7/30
Y1 - 2010/7/30
N2 - RuO2-SiO2 thin films with different Si/Ru molar ratios were prepared by the sol-gel method, using the hydrate ruthenium (III) chloride (RuCl3•3.5H2O) and tetraethylorthosilicate as precursors. The crystal structure, resistivity, chemical bonding configuration, transmittance, carrier concentration, and mobility of the RuO2-SiO2 films were investigated before and after annealing in N2 ambient at 400-700 °C. The resistivity of the RuO2-SiO2 films with different Si/Ru molar ratios decreased abruptly after annealing at 400-700 °C. On the other hand, RuO2 phase precipitated in the RuO2-SiO2 films with different Si/Ru molar ratios after annealing. Fourier transform infrared spectroscopy spectra indicated that the water absorption occurs for as-deposited RuO2-SiO2 films with different Si/Ru molar ratios. The transmittance of all RuO2-SiO2 films presented transmittance maximums after annealing at 700 °C. The carrier concentration and mobility of RuO2-SiO2 films are related to the Si/Ru molar ratios and the annealing temperature. This study discusses the connection among the material properties of the RuO2-SiO2 films and how they are influenced by the Si/Ru molar ratios and the annealing temperatures of RuO2-SiO2 films.
AB - RuO2-SiO2 thin films with different Si/Ru molar ratios were prepared by the sol-gel method, using the hydrate ruthenium (III) chloride (RuCl3•3.5H2O) and tetraethylorthosilicate as precursors. The crystal structure, resistivity, chemical bonding configuration, transmittance, carrier concentration, and mobility of the RuO2-SiO2 films were investigated before and after annealing in N2 ambient at 400-700 °C. The resistivity of the RuO2-SiO2 films with different Si/Ru molar ratios decreased abruptly after annealing at 400-700 °C. On the other hand, RuO2 phase precipitated in the RuO2-SiO2 films with different Si/Ru molar ratios after annealing. Fourier transform infrared spectroscopy spectra indicated that the water absorption occurs for as-deposited RuO2-SiO2 films with different Si/Ru molar ratios. The transmittance of all RuO2-SiO2 films presented transmittance maximums after annealing at 700 °C. The carrier concentration and mobility of RuO2-SiO2 films are related to the Si/Ru molar ratios and the annealing temperature. This study discusses the connection among the material properties of the RuO2-SiO2 films and how they are influenced by the Si/Ru molar ratios and the annealing temperatures of RuO2-SiO2 films.
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U2 - 10.1016/j.tsf.2010.03.075
DO - 10.1016/j.tsf.2010.03.075
M3 - Article
AN - SCOPUS:77955659167
VL - 518
SP - 5416
EP - 5420
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 19
ER -