@inproceedings{ec68e9729e54463db2ed1733876967df,
title = "Preparation and optoelectronic properties of NiO/ZnO heterostructure nanowires",
abstract = "This study proposes the use of a ZnO-nanowire (ZnO-NW)-based heterojunction structure for applications of nano optoelectronic sensors and photovoltaic devices. Nano heterojunctions (NHJs) were formed via e-beam deposition of p-type nickel oxide (NiO) onto the vertical-aligned ZnO-NWs grown by hydro-thermal growth method. The dark J-V curve shows that the prepared NiO/ZnO-NWs NHJ has a diode-like behavior with a forward threshold voltage (Vth) of 1.2 V and a leakage current (Jr at -1V) of 0.02 μA/cm2, respectively. It also exhibits a superior response to UV (366 nm) and AM 1.5G light illuminations. The Vth and the photocurrents (i.e., J r at -1V) under UV (366 nm @ 6 mW/cm2) and AM 1.5G light were 0.7 V/0.06 μA/cm2 and 0.5 V/ 3.2 μA/cm2, respectively, revealing an increase in the diode current of about 3x and 160x, respectively.",
author = "Tsai, {Wei Chih} and Wang, {Shui Jinn} and Tseng, {Chih Ren} and Ko, {Rong Ming} and Lin, {Jia Chuan}",
year = "2009",
doi = "10.1117/12.820546",
language = "English",
isbn = "9780819476302",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Optical Sensors 2009",
note = "Optical Sensors 2009 ; Conference date: 20-04-2009 Through 22-04-2009",
}