Preparation and optoelectronic properties of NiO/ZnO heterostructure nanowires

Wei Chih Tsai, Shui-Jinn Wang, Chih R. Tseng, Rong Ming Ko, Jia Chuan Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This study proposes the use of a ZnO-nanowire (ZnO-NW)-based heterojunction structure for applications of nano optoelectronic sensors and photovoltaic devices. Nano heterojunctions (NHJs) were formed via e-beam deposition of p-type nickel oxide (NiO) onto the vertical-aligned ZnO-NWs grown by hydro-thermal growth method. The dark J-V curve shows that the prepared NiO/ZnO-NWs NHJ has a diode-like behavior with a forward threshold voltage (Vth) of 1.2 V and a leakage current (Jr at -1V) of 0.02 μA/cm2, respectively. It also exhibits a superior response to UV (366 nm) and AM 1.5G light illuminations. The Vth and the photocurrents (i.e., J r at -1V) under UV (366 nm @ 6 mW/cm2) and AM 1.5G light were 0.7 V/0.06 μA/cm2 and 0.5 V/ 3.2 μA/cm2, respectively, revealing an increase in the diode current of about 3x and 160x, respectively.

Original languageEnglish
Title of host publicationOptical Sensors 2009
DOIs
Publication statusPublished - 2009 Oct 22
EventOptical Sensors 2009 - Prague, Czech Republic
Duration: 2009 Apr 202009 Apr 22

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7356
ISSN (Print)0277-786X

Other

OtherOptical Sensors 2009
CountryCzech Republic
CityPrague
Period09-04-2009-04-22

Fingerprint

Heterojunction
Nickel oxide
Heterostructures
nickel oxides
Nanowires
Optoelectronics
Nickel
Optoelectronic devices
Oxides
Heterojunctions
heterojunctions
Preparation
nanowires
Diode
preparation
Diodes
diodes
Leakage Current
Electron Beam
Photocurrents

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Applied Mathematics
  • Condensed Matter Physics

Cite this

Tsai, W. C., Wang, S-J., Tseng, C. R., Ko, R. M., & Lin, J. C. (2009). Preparation and optoelectronic properties of NiO/ZnO heterostructure nanowires. In Optical Sensors 2009 [73561F] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7356). https://doi.org/10.1117/12.820546
Tsai, Wei Chih ; Wang, Shui-Jinn ; Tseng, Chih R. ; Ko, Rong Ming ; Lin, Jia Chuan. / Preparation and optoelectronic properties of NiO/ZnO heterostructure nanowires. Optical Sensors 2009. 2009. (Proceedings of SPIE - The International Society for Optical Engineering).
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Tsai, WC, Wang, S-J, Tseng, CR, Ko, RM & Lin, JC 2009, Preparation and optoelectronic properties of NiO/ZnO heterostructure nanowires. in Optical Sensors 2009., 73561F, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7356, Optical Sensors 2009, Prague, Czech Republic, 09-04-20. https://doi.org/10.1117/12.820546

Preparation and optoelectronic properties of NiO/ZnO heterostructure nanowires. / Tsai, Wei Chih; Wang, Shui-Jinn; Tseng, Chih R.; Ko, Rong Ming; Lin, Jia Chuan.

Optical Sensors 2009. 2009. 73561F (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7356).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - This study proposes the use of a ZnO-nanowire (ZnO-NW)-based heterojunction structure for applications of nano optoelectronic sensors and photovoltaic devices. Nano heterojunctions (NHJs) were formed via e-beam deposition of p-type nickel oxide (NiO) onto the vertical-aligned ZnO-NWs grown by hydro-thermal growth method. The dark J-V curve shows that the prepared NiO/ZnO-NWs NHJ has a diode-like behavior with a forward threshold voltage (Vth) of 1.2 V and a leakage current (Jr at -1V) of 0.02 μA/cm2, respectively. It also exhibits a superior response to UV (366 nm) and AM 1.5G light illuminations. The Vth and the photocurrents (i.e., J r at -1V) under UV (366 nm @ 6 mW/cm2) and AM 1.5G light were 0.7 V/0.06 μA/cm2 and 0.5 V/ 3.2 μA/cm2, respectively, revealing an increase in the diode current of about 3x and 160x, respectively.

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Tsai WC, Wang S-J, Tseng CR, Ko RM, Lin JC. Preparation and optoelectronic properties of NiO/ZnO heterostructure nanowires. In Optical Sensors 2009. 2009. 73561F. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.820546