TY - JOUR
T1 - Preparation and properties of a high temperature, flexible and colorless ITO coated polyimide substrate
AU - Li, Tung Lin
AU - Hsu, Steve Lien Chung
N1 - Funding Information:
The financial support provided by the National Science Council (Taiwan, ROC) through project NSC 95-2221-E-006-341 and the NCKU Project of Promoting Academic Excellence & Developing World Class Research Centers: D96-2700 is greatly appreciated. The authors also thank the Center for Micro/Nano Technology Research, National Cheng Kung University, Tainan, Taiwan, for equipment access and technical support.
PY - 2007/8
Y1 - 2007/8
N2 - A new high temperature, flexible and colorless indium-tin-oxide (ITO) coated plastic substrate has been prepared from a thermally stable, high glass transition temperature (Tg) and colorless polyimide film. The polyimide was synthesized from 3,3′-diaminodiphenylsulfone (3,3′-DDS) and 4,4′-(hexafluoroisopropylidene) diphthalic anhydride (6FDA) monomers. Its heat distortion temperature was 278 °C. The ITO was deposited on the polyimide film using the magnetron-sputtering process. After annealing at 250 °C under nitrogen for 1 h, the resistivity of the ITO film was 4.0 × 10-4 Ω cm, and its transmittance was 83.5%. Scanning electron microscope (SEM) and X-ray diffraction (XRD) were used to observe the surface and morphology of the ITO film. UV-visible spectroscopy and the four-probe method were used to study their optical and electrical properties. The high performance ITO-plastic substrate can be used in the next generation flat panel displays.
AB - A new high temperature, flexible and colorless indium-tin-oxide (ITO) coated plastic substrate has been prepared from a thermally stable, high glass transition temperature (Tg) and colorless polyimide film. The polyimide was synthesized from 3,3′-diaminodiphenylsulfone (3,3′-DDS) and 4,4′-(hexafluoroisopropylidene) diphthalic anhydride (6FDA) monomers. Its heat distortion temperature was 278 °C. The ITO was deposited on the polyimide film using the magnetron-sputtering process. After annealing at 250 °C under nitrogen for 1 h, the resistivity of the ITO film was 4.0 × 10-4 Ω cm, and its transmittance was 83.5%. Scanning electron microscope (SEM) and X-ray diffraction (XRD) were used to observe the surface and morphology of the ITO film. UV-visible spectroscopy and the four-probe method were used to study their optical and electrical properties. The high performance ITO-plastic substrate can be used in the next generation flat panel displays.
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U2 - 10.1016/j.eurpolymj.2007.04.039
DO - 10.1016/j.eurpolymj.2007.04.039
M3 - Article
AN - SCOPUS:34547412097
VL - 43
SP - 3368
EP - 3373
JO - European Polymer Journal
JF - European Polymer Journal
SN - 0014-3057
IS - 8
ER -