Preparation of Al-Ni alloy films by alternate sputter deposition

J. K. Ho, K. L. Lin

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Al-Ni alloy films with an A1 to Ni atomic ratio greater than 0.79 were prepared via an alternate sputter deposition technique. The formation of the alloy films was attributed to the interdiffusion and reaction between A1 and Ni atoms by the adatom substitution. The crystal structures are all in accordance with the equilibrium phase diagram when the A1 to Ni atomic ratio is greater than 2.30. The film with A1 to Ni atomic ratio 2.30 is composed of Ni2Al3 and NiAl. A complete NiAl film was obtained when the A1 to Ni atomic ratio is less than 1.53. The crystal structure of the film was reverted to Ni-Al equilibrium phases when the -100 V substrate bias was applied during deposition. The films with a NiAl structure showed (100) and (110) preferred orientations on the Si and glass substrates, respectively, disregarding the application of bias. The application of substrate bias significantly reduced the O and N contents and prevented the A1 from oxidization. However, bias caused an incorporation of Ar and a lowering of A1 content in the films was also observed. The decrease in A1 content by the application of bias was attributed to the easier sublimation of A1 adatoms from the surface than that from the Ni adatoms.

Original languageEnglish
Pages (from-to)2170-2176
Number of pages7
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number4
Publication statusPublished - 1995 Jul

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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