TY - JOUR
T1 - Preparation of BaTiO3 thin film by hydrothermal electrochemical method
AU - Yoshimura, Masahiro
AU - Yoo, Seung Eul
AU - Hayashi, Motoo
AU - Ishizawa, Nobuo
PY - 1989/11
Y1 - 1989/11
N2 - BaTiO3 thin films have been prepared in situ on Ti metal substrates by a hydrothermal electrochemical technique, where a direct current has been passed between the anode, Ti plate, and the cathode, Pt plate, in high-temperature, high-pressure Ba2+ solutions. Dense thin films, 0.1∼0.3 μm thick, which consist of cubic BaTiO3 polycrystals without apparent pores or defects have been obtained under the following conditions: in 0.25∼0.5 N-Ba(OH)2 solutions above 100°C under saturated vapor pressures with the current density of 10∼100 mA/cm2 after 30∼80 min. These films are paraelectric with the dielectric constant of ≈300.
AB - BaTiO3 thin films have been prepared in situ on Ti metal substrates by a hydrothermal electrochemical technique, where a direct current has been passed between the anode, Ti plate, and the cathode, Pt plate, in high-temperature, high-pressure Ba2+ solutions. Dense thin films, 0.1∼0.3 μm thick, which consist of cubic BaTiO3 polycrystals without apparent pores or defects have been obtained under the following conditions: in 0.25∼0.5 N-Ba(OH)2 solutions above 100°C under saturated vapor pressures with the current density of 10∼100 mA/cm2 after 30∼80 min. These films are paraelectric with the dielectric constant of ≈300.
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U2 - 10.1143/JJAP.28.L2007
DO - 10.1143/JJAP.28.L2007
M3 - Article
AN - SCOPUS:0024768661
SN - 0021-4922
VL - 28
SP - L2007-L2009
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 11 A
ER -