Preparation of complex oxide thin films under hydrothermal and hydrothermal-electrochemical conditions

K. Kajiyoshi, K. Yanagisawa, Q. Feng, M. Yoshimura

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8 Citations (Scopus)


Thin-film growth of complex oxides including BaTiO3, SrTiO 3, BaZrO3, SrZrO3, KTaO3, and KNbO3 were studied by the hydrothermal and the hydrothermal- electrochemical methods. Hydrothermal-electrochemical growth of ATiO3 (A = Ba, Sr) thin films was investigated at temperatures from 100° to 200°C using a three-electrode cell. Current efficiency for the film growth was in the range from ca. 0.6% to 3.0%. Tracer experiments revealed that the ATiO3 film grows at the film/substrate interface. AZrO3 (A = Ba, Sr) thin films were also prepared on Zr metal substrates by the hydrothermal-electrochemical method. By applying a potential above ca. +2 V vs. Ag/AgCl to the Zr substrates, AZrO3 thin films were formed uniformly. KMO3 (M = Ta, Nb) thin films were prepared on Ta metal substrates by the hydrothermal method. Perovskite-type KTaO3 thin films were formed in 2.0 M KOH at 300°C. Pyrochlore-type K2Ta 2O6 thin films were formed at lower temperatures and lower KOH concentrations. Morphotropic phase changes were also revealed in the hydrothermal system KTaO3-KNbO3.

Original languageEnglish
Pages (from-to)1535-1540
Number of pages6
JournalJournal of Materials Science
Issue number5
Publication statusPublished - 2006 Mar

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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