Preparation of Ni/Zn and NiO/ZnO heterojunction nanowires and their optoelectrical characteristics

Wei Chih Tsai, Shui Jinn Wang, Chih Ren Tseng, Rong Ming Ko, Jia Chuan Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

In this study, well-ordered and vertically-aligned metal (nickel (Ni)/zinc (Zn)) and metal oxides (NiO/ZnO) nano heterojunctions (NHJs) were grown inside the nanopores of anodic aluminum oxide template (AAOT) using electrochemical deposition (ECD) and thermal oxidization. The prepared NHJs are with a controllable length and diameter. The electrical properties of NiO/ZnO NHJs show a rectifying behavior of a p-n junction, while the Ni/Zn NHJs show an ohmic behavior. The optoelectronic characteristics demonstrate that the NiO/ZnO NHJs have fairly good sensitivity and response to the ultraviolet (UV) light (366 nm) with decrease in Vth by about 75% and an increase in Jr by about 80% @ 6 mW/cm2. The low dimension of NHJs shows profound quantum confinement effect, which would be potential applications on nano integrated photonics, such as photodetectors, optical sensors and biosensors.

Original languageEnglish
Title of host publicationOptical Sensors 2009
DOIs
Publication statusPublished - 2009 Oct 22
EventOptical Sensors 2009 - Prague, Czech Republic
Duration: 2009 Apr 202009 Apr 22

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7356
ISSN (Print)0277-786X

Other

OtherOptical Sensors 2009
CountryCzech Republic
CityPrague
Period09-04-2009-04-22

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Preparation of Ni/Zn and NiO/ZnO heterojunction nanowires and their optoelectrical characteristics'. Together they form a unique fingerprint.

Cite this