Abstract
Oxidized nano-porous-silicon (ONPS) thin films were prepared by rapid-thermal oxidization of nano-porous silicon films that were formed on Si substrates with an anodization technology. The ONPS films exhibited high responsivity for incident ultra-violet (UV) light with wavelengths between 300 nm and 400 nm. Under illumination of incident 350 nm UV light and 5 V bias, the ONPS-based photodiodes obtained a high photo current of 3.24 mA/cm2 and large photo-to-dark current ratio of 300, indicating that the ONPS thin films have significant potential for applications of UV optical-sensing devices. Crown
Original language | English |
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Pages (from-to) | 275-277 |
Number of pages | 3 |
Journal | Thin Solid Films |
Volume | 529 |
DOIs | |
Publication status | Published - 2013 Feb 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry