Preparation of oxidized nano-porous-silicon thin films for ultra-violet optical-sensing applications

Mien Liang Lin; Yu Cheng Lin; Kuen Hsien Wu; Cih Pu Huang

doi:10.1016/j.tsf.2012.03.054

Preparation of oxidized nano-porous-silicon thin films for ultra-violet optical-sensing applications

Mien Liang Lin, Yu Cheng Lin, Kuen Hsien Wu, Cih Pu Huang

Department of Engineering Science

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Oxidized nano-porous-silicon (ONPS) thin films were prepared by rapid-thermal oxidization of nano-porous silicon films that were formed on Si substrates with an anodization technology. The ONPS films exhibited high responsivity for incident ultra-violet (UV) light with wavelengths between 300 nm and 400 nm. Under illumination of incident 350 nm UV light and 5 V bias, the ONPS-based photodiodes obtained a high photo current of 3.24 mA/cm² and large photo-to-dark current ratio of 300, indicating that the ONPS thin films have significant potential for applications of UV optical-sensing devices. Crown

Original language	English
Pages (from-to)	275-277
Number of pages	3
Journal	Thin Solid Films
Volume	529
DOIs	https://doi.org/10.1016/j.tsf.2012.03.054
Publication status	Published - 2013 Feb 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2012.03.054

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title = "Preparation of oxidized nano-porous-silicon thin films for ultra-violet optical-sensing applications",

abstract = "Oxidized nano-porous-silicon (ONPS) thin films were prepared by rapid-thermal oxidization of nano-porous silicon films that were formed on Si substrates with an anodization technology. The ONPS films exhibited high responsivity for incident ultra-violet (UV) light with wavelengths between 300 nm and 400 nm. Under illumination of incident 350 nm UV light and 5 V bias, the ONPS-based photodiodes obtained a high photo current of 3.24 mA/cm2 and large photo-to-dark current ratio of 300, indicating that the ONPS thin films have significant potential for applications of UV optical-sensing devices. Crown",

author = "Lin, {Mien Liang} and Lin, {Yu Cheng} and Wu, {Kuen Hsien} and Huang, {Cih Pu}",

year = "2013",

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doi = "10.1016/j.tsf.2012.03.054",

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T1 - Preparation of oxidized nano-porous-silicon thin films for ultra-violet optical-sensing applications

AU - Lin, Mien Liang

AU - Lin, Yu Cheng

AU - Wu, Kuen Hsien

AU - Huang, Cih Pu

PY - 2013/2/1

Y1 - 2013/2/1

N2 - Oxidized nano-porous-silicon (ONPS) thin films were prepared by rapid-thermal oxidization of nano-porous silicon films that were formed on Si substrates with an anodization technology. The ONPS films exhibited high responsivity for incident ultra-violet (UV) light with wavelengths between 300 nm and 400 nm. Under illumination of incident 350 nm UV light and 5 V bias, the ONPS-based photodiodes obtained a high photo current of 3.24 mA/cm2 and large photo-to-dark current ratio of 300, indicating that the ONPS thin films have significant potential for applications of UV optical-sensing devices. Crown

AB - Oxidized nano-porous-silicon (ONPS) thin films were prepared by rapid-thermal oxidization of nano-porous silicon films that were formed on Si substrates with an anodization technology. The ONPS films exhibited high responsivity for incident ultra-violet (UV) light with wavelengths between 300 nm and 400 nm. Under illumination of incident 350 nm UV light and 5 V bias, the ONPS-based photodiodes obtained a high photo current of 3.24 mA/cm2 and large photo-to-dark current ratio of 300, indicating that the ONPS thin films have significant potential for applications of UV optical-sensing devices. Crown

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M3 - Article

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JO - Thin Solid Films

JF - Thin Solid Films

ER -

Preparation of oxidized nano-porous-silicon thin films for ultra-violet optical-sensing applications

Abstract

All Science Journal Classification (ASJC) codes

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