Preparation of oxidized nano-porous-silicon thin films for ultra-violet optical-sensing applications

Mien Liang Lin, Yu Cheng Lin, Kuen Hsien Wu, Cih Pu Huang

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Oxidized nano-porous-silicon (ONPS) thin films were prepared by rapid-thermal oxidization of nano-porous silicon films that were formed on Si substrates with an anodization technology. The ONPS films exhibited high responsivity for incident ultra-violet (UV) light with wavelengths between 300 nm and 400 nm. Under illumination of incident 350 nm UV light and 5 V bias, the ONPS-based photodiodes obtained a high photo current of 3.24 mA/cm2 and large photo-to-dark current ratio of 300, indicating that the ONPS thin films have significant potential for applications of UV optical-sensing devices. Crown

Original languageEnglish
Pages (from-to)275-277
Number of pages3
JournalThin Solid Films
Publication statusPublished - 2013 Feb 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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