Preparation of oxidized nano-porous-silicon thin films for ultra-violet optical-sensing applications

Mien Liang Lin; Yu Cheng Lin; Kuen Hsien Wu; Cih Pu Huang

doi:10.1016/j.tsf.2012.03.054

Preparation of oxidized nano-porous-silicon thin films for ultra-violet optical-sensing applications

Mien Liang Lin
, Yu Cheng Lin
, Kuen Hsien Wu
, Cih Pu Huang

Department of Engineering Science

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Oxidized nano-porous-silicon (ONPS) thin films were prepared by rapid-thermal oxidization of nano-porous silicon films that were formed on Si substrates with an anodization technology. The ONPS films exhibited high responsivity for incident ultra-violet (UV) light with wavelengths between 300 nm and 400 nm. Under illumination of incident 350 nm UV light and 5 V bias, the ONPS-based photodiodes obtained a high photo current of 3.24 mA/cm² and large photo-to-dark current ratio of 300, indicating that the ONPS thin films have significant potential for applications of UV optical-sensing devices. Crown

Original language	English
Pages (from-to)	275-277
Number of pages	3
Journal	Thin Solid Films
Volume	529
DOIs	https://doi.org/10.1016/j.tsf.2012.03.054
Publication status	Published - 2013 Feb 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2012.03.054

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@article{74a0ef8898454cc6b7e18acb068d0dbc,

title = "Preparation of oxidized nano-porous-silicon thin films for ultra-violet optical-sensing applications",

abstract = "Oxidized nano-porous-silicon (ONPS) thin films were prepared by rapid-thermal oxidization of nano-porous silicon films that were formed on Si substrates with an anodization technology. The ONPS films exhibited high responsivity for incident ultra-violet (UV) light with wavelengths between 300 nm and 400 nm. Under illumination of incident 350 nm UV light and 5 V bias, the ONPS-based photodiodes obtained a high photo current of 3.24 mA/cm2 and large photo-to-dark current ratio of 300, indicating that the ONPS thin films have significant potential for applications of UV optical-sensing devices. Crown",

author = "Lin, \{Mien Liang\} and Lin, \{Yu Cheng\} and Wu, \{Kuen Hsien\} and Huang, \{Cih Pu\}",

year = "2013",

month = feb,

day = "1",

doi = "10.1016/j.tsf.2012.03.054",

language = "English",

volume = "529",

pages = "275--277",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Preparation of oxidized nano-porous-silicon thin films for ultra-violet optical-sensing applications

AU - Lin, Mien Liang

AU - Lin, Yu Cheng

AU - Wu, Kuen Hsien

AU - Huang, Cih Pu

PY - 2013/2/1

Y1 - 2013/2/1

N2 - Oxidized nano-porous-silicon (ONPS) thin films were prepared by rapid-thermal oxidization of nano-porous silicon films that were formed on Si substrates with an anodization technology. The ONPS films exhibited high responsivity for incident ultra-violet (UV) light with wavelengths between 300 nm and 400 nm. Under illumination of incident 350 nm UV light and 5 V bias, the ONPS-based photodiodes obtained a high photo current of 3.24 mA/cm2 and large photo-to-dark current ratio of 300, indicating that the ONPS thin films have significant potential for applications of UV optical-sensing devices. Crown

AB - Oxidized nano-porous-silicon (ONPS) thin films were prepared by rapid-thermal oxidization of nano-porous silicon films that were formed on Si substrates with an anodization technology. The ONPS films exhibited high responsivity for incident ultra-violet (UV) light with wavelengths between 300 nm and 400 nm. Under illumination of incident 350 nm UV light and 5 V bias, the ONPS-based photodiodes obtained a high photo current of 3.24 mA/cm2 and large photo-to-dark current ratio of 300, indicating that the ONPS thin films have significant potential for applications of UV optical-sensing devices. Crown

UR - https://www.scopus.com/pages/publications/84873738738

UR - https://www.scopus.com/pages/publications/84873738738#tab=citedBy

U2 - 10.1016/j.tsf.2012.03.054

DO - 10.1016/j.tsf.2012.03.054

M3 - Article

AN - SCOPUS:84873738738

SN - 0040-6090

VL - 529

SP - 275

EP - 277

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Preparation of oxidized nano-porous-silicon thin films for ultra-violet optical-sensing applications

Abstract

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