Preparation of p-SnO/n-ZnO heterojunction nanowire arrays and their optoelectronic characteristics under UV illumination

Fu Shou Tsai, Shui Jinn Wang, Yung Chun Tu, Yu Wei Hsu, Chao Yin Kuo, Zeng Sing Lin, Rong Ming Ko

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30 Citations (Scopus)

Abstract

In this work, the use of a ZnO-nanowire (NW)-based heterojunction array structure for application to UV sensors is proposed. Nano-heterojunction arrays (NHAs) were formed via the oblique-angle sputtering deposition of p-type tin monoxide onto vertically aligned ZnO-NWs grown by hydrothermal growth (HTG). The current density-voltage (J-V) curve in darkness shows that the prepared SnO/ZnO-NW NHAs have rectifying current-voltage characteristics. They also exhibit a superior response to UV (254 nm) light illumination. The optoelectronic properties of the SnO/ ZnO-NW NHAs with different SnO thicknesses (50-1000 nm) under different UV light intensities (2-6mW/cm2) were investigated and discussed. UV sensitivity (IUV=Idark) as high as 8.5 was obtained.

Original languageEnglish
Article number25002
JournalApplied Physics Express
Volume4
Issue number2
DOIs
Publication statusPublished - 2011 Feb 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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