Abstract
In this work, the use of a ZnO-nanowire (NW)-based heterojunction array structure for application to UV sensors is proposed. Nano-heterojunction arrays (NHAs) were formed via the oblique-angle sputtering deposition of p-type tin monoxide onto vertically aligned ZnO-NWs grown by hydrothermal growth (HTG). The current density-voltage (J-V) curve in darkness shows that the prepared SnO/ZnO-NW NHAs have rectifying current-voltage characteristics. They also exhibit a superior response to UV (254 nm) light illumination. The optoelectronic properties of the SnO/ ZnO-NW NHAs with different SnO thicknesses (50-1000 nm) under different UV light intensities (2-6mW/cm2) were investigated and discussed. UV sensitivity (IUV=Idark) as high as 8.5 was obtained.
| Original language | English |
|---|---|
| Article number | 25002 |
| Journal | Applied Physics Express |
| Volume | 4 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2011 Feb 1 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Preparation of p-SnO/n-ZnO heterojunction nanowire arrays and their optoelectronic characteristics under UV illumination. / Tsai, Fu Shou; Wang, Shui-Jinn; Tu, Yung Chun; Hsu, Yu Wei; Kuo, Chao Yin; Lin, Zeng Sing; Ko, Rong Ming.
In: Applied Physics Express, Vol. 4, No. 2, 25002, 01.02.2011.Research output: Contribution to journal › Article
TY - JOUR
T1 - Preparation of p-SnO/n-ZnO heterojunction nanowire arrays and their optoelectronic characteristics under UV illumination
AU - Tsai, Fu Shou
AU - Wang, Shui-Jinn
AU - Tu, Yung Chun
AU - Hsu, Yu Wei
AU - Kuo, Chao Yin
AU - Lin, Zeng Sing
AU - Ko, Rong Ming
PY - 2011/2/1
Y1 - 2011/2/1
N2 - In this work, the use of a ZnO-nanowire (NW)-based heterojunction array structure for application to UV sensors is proposed. Nano-heterojunction arrays (NHAs) were formed via the oblique-angle sputtering deposition of p-type tin monoxide onto vertically aligned ZnO-NWs grown by hydrothermal growth (HTG). The current density-voltage (J-V) curve in darkness shows that the prepared SnO/ZnO-NW NHAs have rectifying current-voltage characteristics. They also exhibit a superior response to UV (254 nm) light illumination. The optoelectronic properties of the SnO/ ZnO-NW NHAs with different SnO thicknesses (50-1000 nm) under different UV light intensities (2-6mW/cm2) were investigated and discussed. UV sensitivity (IUV=Idark) as high as 8.5 was obtained.
AB - In this work, the use of a ZnO-nanowire (NW)-based heterojunction array structure for application to UV sensors is proposed. Nano-heterojunction arrays (NHAs) were formed via the oblique-angle sputtering deposition of p-type tin monoxide onto vertically aligned ZnO-NWs grown by hydrothermal growth (HTG). The current density-voltage (J-V) curve in darkness shows that the prepared SnO/ZnO-NW NHAs have rectifying current-voltage characteristics. They also exhibit a superior response to UV (254 nm) light illumination. The optoelectronic properties of the SnO/ ZnO-NW NHAs with different SnO thicknesses (50-1000 nm) under different UV light intensities (2-6mW/cm2) were investigated and discussed. UV sensitivity (IUV=Idark) as high as 8.5 was obtained.
UR - http://www.scopus.com/inward/record.url?scp=79951642353&partnerID=8YFLogxK
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U2 - 10.1143/APEX.4.025002
DO - 10.1143/APEX.4.025002
M3 - Article
VL - 4
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 2
M1 - 25002
ER -