Abstract
In this work, the use of a ZnO-nanowire (NW)-based heterojunction array structure for application to UV sensors is proposed. Nano-heterojunction arrays (NHAs) were formed via the oblique-angle sputtering deposition of p-type tin monoxide onto vertically aligned ZnO-NWs grown by hydrothermal growth (HTG). The current density-voltage (J-V) curve in darkness shows that the prepared SnO/ZnO-NW NHAs have rectifying current-voltage characteristics. They also exhibit a superior response to UV (254 nm) light illumination. The optoelectronic properties of the SnO/ ZnO-NW NHAs with different SnO thicknesses (50-1000 nm) under different UV light intensities (2-6mW/cm2) were investigated and discussed. UV sensitivity (IUV=Idark) as high as 8.5 was obtained.
Original language | English |
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Article number | 25002 |
Journal | Applied Physics Express |
Volume | 4 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2011 Feb 1 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)