Preparation of p-SnO/n-ZnO heterojunction nanowire arrays and their optoelectronic characteristics under UV illumination

Fu Shou Tsai; Shui Jinn Wang; Yung Chun Tu; Yu Wei Hsu; Chao Yin Kuo; Zeng Sing Lin; Rong Ming Ko

doi:10.1143/APEX.4.025002

Preparation of p-SnO/n-ZnO heterojunction nanowire arrays and their optoelectronic characteristics under UV illumination

Fu Shou Tsai, Shui Jinn Wang, Yung Chun Tu, Yu Wei Hsu, Chao Yin Kuo, Zeng Sing Lin, Rong Ming Ko

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

In this work, the use of a ZnO-nanowire (NW)-based heterojunction array structure for application to UV sensors is proposed. Nano-heterojunction arrays (NHAs) were formed via the oblique-angle sputtering deposition of p-type tin monoxide onto vertically aligned ZnO-NWs grown by hydrothermal growth (HTG). The current density-voltage (J-V) curve in darkness shows that the prepared SnO/ZnO-NW NHAs have rectifying current-voltage characteristics. They also exhibit a superior response to UV (254 nm) light illumination. The optoelectronic properties of the SnO/ ZnO-NW NHAs with different SnO thicknesses (50-1000 nm) under different UV light intensities (2-6mW/cm²) were investigated and discussed. UV sensitivity (I_UV=I_dark) as high as 8.5 was obtained.

Original language	English
Article number	25002
Journal	Applied Physics Express
Volume	4
Issue number	2
DOIs	https://doi.org/10.1143/APEX.4.025002
Publication status	Published - 2011 Feb 1

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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@article{a42c87afba4a4ab5a477c07b41355dd2,

title = "Preparation of p-SnO/n-ZnO heterojunction nanowire arrays and their optoelectronic characteristics under UV illumination",

abstract = "In this work, the use of a ZnO-nanowire (NW)-based heterojunction array structure for application to UV sensors is proposed. Nano-heterojunction arrays (NHAs) were formed via the oblique-angle sputtering deposition of p-type tin monoxide onto vertically aligned ZnO-NWs grown by hydrothermal growth (HTG). The current density-voltage (J-V) curve in darkness shows that the prepared SnO/ZnO-NW NHAs have rectifying current-voltage characteristics. They also exhibit a superior response to UV (254 nm) light illumination. The optoelectronic properties of the SnO/ ZnO-NW NHAs with different SnO thicknesses (50-1000 nm) under different UV light intensities (2-6mW/cm2) were investigated and discussed. UV sensitivity (IUV=Idark) as high as 8.5 was obtained.",

author = "Tsai, {Fu Shou} and Wang, {Shui Jinn} and Tu, {Yung Chun} and Hsu, {Yu Wei} and Kuo, {Chao Yin} and Lin, {Zeng Sing} and Ko, {Rong Ming}",

year = "2011",

month = feb,

day = "1",

doi = "10.1143/APEX.4.025002",

language = "English",

volume = "4",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "2",

}

TY - JOUR

T1 - Preparation of p-SnO/n-ZnO heterojunction nanowire arrays and their optoelectronic characteristics under UV illumination

AU - Tsai, Fu Shou

AU - Wang, Shui Jinn

AU - Tu, Yung Chun

AU - Hsu, Yu Wei

AU - Kuo, Chao Yin

AU - Lin, Zeng Sing

AU - Ko, Rong Ming

PY - 2011/2/1

Y1 - 2011/2/1

N2 - In this work, the use of a ZnO-nanowire (NW)-based heterojunction array structure for application to UV sensors is proposed. Nano-heterojunction arrays (NHAs) were formed via the oblique-angle sputtering deposition of p-type tin monoxide onto vertically aligned ZnO-NWs grown by hydrothermal growth (HTG). The current density-voltage (J-V) curve in darkness shows that the prepared SnO/ZnO-NW NHAs have rectifying current-voltage characteristics. They also exhibit a superior response to UV (254 nm) light illumination. The optoelectronic properties of the SnO/ ZnO-NW NHAs with different SnO thicknesses (50-1000 nm) under different UV light intensities (2-6mW/cm2) were investigated and discussed. UV sensitivity (IUV=Idark) as high as 8.5 was obtained.

AB - In this work, the use of a ZnO-nanowire (NW)-based heterojunction array structure for application to UV sensors is proposed. Nano-heterojunction arrays (NHAs) were formed via the oblique-angle sputtering deposition of p-type tin monoxide onto vertically aligned ZnO-NWs grown by hydrothermal growth (HTG). The current density-voltage (J-V) curve in darkness shows that the prepared SnO/ZnO-NW NHAs have rectifying current-voltage characteristics. They also exhibit a superior response to UV (254 nm) light illumination. The optoelectronic properties of the SnO/ ZnO-NW NHAs with different SnO thicknesses (50-1000 nm) under different UV light intensities (2-6mW/cm2) were investigated and discussed. UV sensitivity (IUV=Idark) as high as 8.5 was obtained.

UR - http://www.scopus.com/inward/record.url?scp=79951642353&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79951642353&partnerID=8YFLogxK

U2 - 10.1143/APEX.4.025002

DO - 10.1143/APEX.4.025002

M3 - Article

AN - SCOPUS:79951642353

VL - 4

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 2

M1 - 25002

ER -