Preparation of p-SnO/n-ZnO heterojunction nanowire arrays and their optoelectronic characteristics under UV illumination

Fu Shou Tsai; Shui Jinn Wang; Yung Chun Tu; Yu Wei Hsu; Chao Yin Kuo; Zeng Sing Lin; Rong Ming Ko

doi:10.1143/APEX.4.025002

Preparation of p-SnO/n-ZnO heterojunction nanowire arrays and their optoelectronic characteristics under UV illumination

Fu Shou Tsai
, Shui Jinn Wang
, Yung Chun Tu
, Yu Wei Hsu
, Chao Yin Kuo
, Zeng Sing Lin
, Rong Ming Ko

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

In this work, the use of a ZnO-nanowire (NW)-based heterojunction array structure for application to UV sensors is proposed. Nano-heterojunction arrays (NHAs) were formed via the oblique-angle sputtering deposition of p-type tin monoxide onto vertically aligned ZnO-NWs grown by hydrothermal growth (HTG). The current density-voltage (J-V) curve in darkness shows that the prepared SnO/ZnO-NW NHAs have rectifying current-voltage characteristics. They also exhibit a superior response to UV (254 nm) light illumination. The optoelectronic properties of the SnO/ ZnO-NW NHAs with different SnO thicknesses (50-1000 nm) under different UV light intensities (2-6mW/cm²) were investigated and discussed. UV sensitivity (I_UV=I_dark) as high as 8.5 was obtained.

Original language	English
Article number	25002
Journal	Applied Physics Express
Volume	4
Issue number	2
DOIs	https://doi.org/10.1143/APEX.4.025002
Publication status	Published - 2011 Feb

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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10.1143/APEX.4.025002

Cite this

@article{a42c87afba4a4ab5a477c07b41355dd2,

title = "Preparation of p-SnO/n-ZnO heterojunction nanowire arrays and their optoelectronic characteristics under UV illumination",

abstract = "In this work, the use of a ZnO-nanowire (NW)-based heterojunction array structure for application to UV sensors is proposed. Nano-heterojunction arrays (NHAs) were formed via the oblique-angle sputtering deposition of p-type tin monoxide onto vertically aligned ZnO-NWs grown by hydrothermal growth (HTG). The current density-voltage (J-V) curve in darkness shows that the prepared SnO/ZnO-NW NHAs have rectifying current-voltage characteristics. They also exhibit a superior response to UV (254 nm) light illumination. The optoelectronic properties of the SnO/ ZnO-NW NHAs with different SnO thicknesses (50-1000 nm) under different UV light intensities (2-6mW/cm2) were investigated and discussed. UV sensitivity (IUV=Idark) as high as 8.5 was obtained.",

author = "Tsai, \{Fu Shou\} and Wang, \{Shui Jinn\} and Tu, \{Yung Chun\} and Hsu, \{Yu Wei\} and Kuo, \{Chao Yin\} and Lin, \{Zeng Sing\} and Ko, \{Rong Ming\}",

year = "2011",

month = feb,

doi = "10.1143/APEX.4.025002",

language = "English",

volume = "4",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "2",

}

TY - JOUR

T1 - Preparation of p-SnO/n-ZnO heterojunction nanowire arrays and their optoelectronic characteristics under UV illumination

AU - Tsai, Fu Shou

AU - Wang, Shui Jinn

AU - Tu, Yung Chun

AU - Hsu, Yu Wei

AU - Kuo, Chao Yin

AU - Lin, Zeng Sing

AU - Ko, Rong Ming

PY - 2011/2

Y1 - 2011/2

N2 - In this work, the use of a ZnO-nanowire (NW)-based heterojunction array structure for application to UV sensors is proposed. Nano-heterojunction arrays (NHAs) were formed via the oblique-angle sputtering deposition of p-type tin monoxide onto vertically aligned ZnO-NWs grown by hydrothermal growth (HTG). The current density-voltage (J-V) curve in darkness shows that the prepared SnO/ZnO-NW NHAs have rectifying current-voltage characteristics. They also exhibit a superior response to UV (254 nm) light illumination. The optoelectronic properties of the SnO/ ZnO-NW NHAs with different SnO thicknesses (50-1000 nm) under different UV light intensities (2-6mW/cm2) were investigated and discussed. UV sensitivity (IUV=Idark) as high as 8.5 was obtained.

AB - In this work, the use of a ZnO-nanowire (NW)-based heterojunction array structure for application to UV sensors is proposed. Nano-heterojunction arrays (NHAs) were formed via the oblique-angle sputtering deposition of p-type tin monoxide onto vertically aligned ZnO-NWs grown by hydrothermal growth (HTG). The current density-voltage (J-V) curve in darkness shows that the prepared SnO/ZnO-NW NHAs have rectifying current-voltage characteristics. They also exhibit a superior response to UV (254 nm) light illumination. The optoelectronic properties of the SnO/ ZnO-NW NHAs with different SnO thicknesses (50-1000 nm) under different UV light intensities (2-6mW/cm2) were investigated and discussed. UV sensitivity (IUV=Idark) as high as 8.5 was obtained.

UR - https://www.scopus.com/pages/publications/79951642353

UR - https://www.scopus.com/pages/publications/79951642353#tab=citedBy

U2 - 10.1143/APEX.4.025002

DO - 10.1143/APEX.4.025002

M3 - Article

AN - SCOPUS:79951642353

SN - 1882-0778

VL - 4

JO - Applied Physics Express

JF - Applied Physics Express

IS - 2

M1 - 25002

ER -

Preparation of p-SnO/n-ZnO heterojunction nanowire arrays and their optoelectronic characteristics under UV illumination

Abstract

All Science Journal Classification (ASJC) codes

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