Preparation of perovskite conductive LaNiO3 films by sol-gel techniques

Pei Ying Lai, Jen Sue Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Metallic thin films of LaNiO3 (LNO) have been prepared by the sol-gel method using lanthanum nitrate [La(NO3)3· 6H2O] and nickel acetate [Ni(CH3COO)2· 4H2O] as raw materials. X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and electrical measurements were used to characterize the multilayer LNO thin films. The perovskite phase appears after annealing at temperatures above 600°C. LNO thin films are n-type metallic oxide. The lowest resistivity is 621 μΩ-cm after annealing at 600°C, and the carrier concentration is 6.09×1022/cm 3.

Original languageEnglish
Title of host publicationScience and Technology of Nonvolatile Memories
PublisherMaterials Research Society
Pages31-36
Number of pages6
ISBN (Print)155899890X, 9781558998902
DOIs
Publication statusPublished - 2006 Jan 1
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2006 Apr 172006 Apr 21

Publication series

NameMaterials Research Society Symposium Proceedings
Volume933
ISSN (Print)0272-9172

Other

Other2006 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period06-04-1706-04-21

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Preparation of perovskite conductive LaNiO<sub>3</sub> films by sol-gel techniques'. Together they form a unique fingerprint.

  • Cite this

    Lai, P. Y., & Chen, J. S. (2006). Preparation of perovskite conductive LaNiO3 films by sol-gel techniques. In Science and Technology of Nonvolatile Memories (pp. 31-36). (Materials Research Society Symposium Proceedings; Vol. 933). Materials Research Society. https://doi.org/10.1557/proc-0933-g05-05