Preparation of SiO2 film by direct photo-cvd on strained SiGe layer

C. T. Lin, Y. K. Su, S. J. Chang, D. K. Nayak, Y. Shiraki

Research output: Contribution to journalConference article

Abstract

High quality SiO2 layers were deposited on top of strained SiGe by direct photochemical vapor deposition with a deuterium lamp as the excitation source. It was found that the deposition rate increase linearly with the chamber pressure. Auger Electron spectroscopy profile shows that these is no Ge rejected and no Ge-rich layer formed after devices were fabricated. At room temperature, the leakage current is about 3 10-9 A/cm2 under a 2 06 V/cm electric field. The breakdown field can reach over 16 MV/cm for these SiGe MOS diodes.

Original languageEnglish
Pages (from-to)131-136
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume2364
DOIs
Publication statusPublished - 1994 Oct 26
Event2nd International Conference on Thin Film Physics and Applications 1994 - Shanghai, China
Duration: 1994 Apr 151994 Apr 17

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Preparation of SiO<sub>2</sub> film by direct photo-cvd on strained SiGe layer'. Together they form a unique fingerprint.

  • Cite this