Abstract
High quality SiO2 layers were deposited on top of strained SiGe by direct photochemical vapor deposition with a deuterium lamp as the excitation source. It was found that the deposition rate increase linearly with the chamber pressure. Auger Electron spectroscopy profile shows that these is no Ge rejected and no Ge-rich layer formed after devices were fabricated. At room temperature, the leakage current is about 3 10-9 A/cm2 under a 2 06 V/cm electric field. The breakdown field can reach over 16 MV/cm for these SiGe MOS diodes.
| Original language | English |
|---|---|
| Pages (from-to) | 131-136 |
| Number of pages | 6 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 2364 |
| DOIs | |
| Publication status | Published - 1994 Oct 26 |
| Event | 2nd International Conference on Thin Film Physics and Applications 1994 - Shanghai, China Duration: 1994 Apr 15 → 1994 Apr 17 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
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Cite this
Lin, C. T., Su, Y. K., Chang, S. J., Nayak, D. K., & Shiraki, Y. (1994). Preparation of SiO2 film by direct photo-cvd on strained SiGe layer. Proceedings of SPIE - The International Society for Optical Engineering, 2364, 131-136. https://doi.org/10.1117/12.190739