Preparation of SiO2 film by direct photo-cvd on strained SiGe layer

C. T. Lin; Y. K. Su; S. J. Chang; D. K. Nayak; Y. Shiraki

doi:10.1117/12.190739

Preparation of SiO₂ film by direct photo-cvd on strained SiGe layer

C. T. Lin, Y. K. Su, S. J. Chang, D. K. Nayak, Y. Shiraki

Research output: Contribution to journal › Conference article › peer-review

Abstract

High quality SiO₂ layers were deposited on top of strained SiGe by direct photochemical vapor deposition with a deuterium lamp as the excitation source. It was found that the deposition rate increase linearly with the chamber pressure. Auger Electron spectroscopy profile shows that these is no Ge rejected and no Ge-rich layer formed after devices were fabricated. At room temperature, the leakage current is about 3 10^-9 A/cm² under a 2 0⁶ V/cm electric field. The breakdown field can reach over 16 MV/cm for these SiGe MOS diodes.

Original language	English
Pages (from-to)	131-136
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2364
DOIs	https://doi.org/10.1117/12.190739
Publication status	Published - 1994 Oct 26
Event	2nd International Conference on Thin Film Physics and Applications 1994 - Shanghai, China Duration: 1994 Apr 15 → 1994 Apr 17

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.190739

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title = "Preparation of SiO2 film by direct photo-cvd on strained SiGe layer",

abstract = "High quality SiO2 layers were deposited on top of strained SiGe by direct photochemical vapor deposition with a deuterium lamp as the excitation source. It was found that the deposition rate increase linearly with the chamber pressure. Auger Electron spectroscopy profile shows that these is no Ge rejected and no Ge-rich layer formed after devices were fabricated. At room temperature, the leakage current is about 3 10-9 A/cm2 under a 2 06 V/cm electric field. The breakdown field can reach over 16 MV/cm for these SiGe MOS diodes.",

author = "Lin, {C. T.} and Su, {Y. K.} and Chang, {S. J.} and Nayak, {D. K.} and Y. Shiraki",

note = "Funding Information: The authors would like to thank professor Y.K. Su for his helpful discussion and assistance. This paper was supported by National Science Council, R.O.C. under Contract No. CS8O-02 1 0D004-24. Publisher Copyright: {\textcopyright} 1994 SPIE. All rights reserved.; 2nd International Conference on Thin Film Physics and Applications 1994 ; Conference date: 15-04-1994 Through 17-04-1994",

year = "1994",

month = oct,

day = "26",

doi = "10.1117/12.190739",

language = "English",

volume = "2364",

pages = "131--136",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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TY - JOUR

T1 - Preparation of SiO2 film by direct photo-cvd on strained SiGe layer

AU - Lin, C. T.

AU - Su, Y. K.

AU - Chang, S. J.

AU - Nayak, D. K.

AU - Shiraki, Y.

N1 - Funding Information: The authors would like to thank professor Y.K. Su for his helpful discussion and assistance. This paper was supported by National Science Council, R.O.C. under Contract No. CS8O-02 1 0D004-24. Publisher Copyright: © 1994 SPIE. All rights reserved.

PY - 1994/10/26

Y1 - 1994/10/26

N2 - High quality SiO2 layers were deposited on top of strained SiGe by direct photochemical vapor deposition with a deuterium lamp as the excitation source. It was found that the deposition rate increase linearly with the chamber pressure. Auger Electron spectroscopy profile shows that these is no Ge rejected and no Ge-rich layer formed after devices were fabricated. At room temperature, the leakage current is about 3 10-9 A/cm2 under a 2 06 V/cm electric field. The breakdown field can reach over 16 MV/cm for these SiGe MOS diodes.

AB - High quality SiO2 layers were deposited on top of strained SiGe by direct photochemical vapor deposition with a deuterium lamp as the excitation source. It was found that the deposition rate increase linearly with the chamber pressure. Auger Electron spectroscopy profile shows that these is no Ge rejected and no Ge-rich layer formed after devices were fabricated. At room temperature, the leakage current is about 3 10-9 A/cm2 under a 2 06 V/cm electric field. The breakdown field can reach over 16 MV/cm for these SiGe MOS diodes.

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DO - 10.1117/12.190739

M3 - Conference article

AN - SCOPUS:0028737268

VL - 2364

SP - 131

EP - 136

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

T2 - 2nd International Conference on Thin Film Physics and Applications 1994

Y2 - 15 April 1994 through 17 April 1994

ER -

Preparation of SiO₂ film by direct photo-cvd on strained SiGe layer

Abstract

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