Preparation of Strontium Titanate Thin Film on Titanium Metal Substrate by Hydrothermal‐Electrochemical Method

Seung Eul Yoo; Motoo Hayashi; Nobuo Ishizawa; Masahiro Yoshimura

doi:10.1111/j.1151-2916.1990.tb07637.x

Preparation of Strontium Titanate Thin Film on Titanium Metal Substrate by Hydrothermal‐Electrochemical Method

Seung Eul Yoo, Motoo Hayashi, Nobuo Ishizawa, Masahiro Yoshimura

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

74 Citations (Scopus)

Abstract

Polycrystalline SrTiO₃ thin films have been prepared on Timetal substrates by the hydrothermal‐electrochemical method. The films were prepared at temperatures ranging from 100° to 200°C and under saturated vapor pressures in electrolytic solutions of 1N to 5N Sr(OH)₂. A galvanostat was used to apply a direct current of 5 to 25 mA/cm². The films had smooth and homogeneous surfaces without any visible pores or defects. The dielectric constant of the films was approximately 129 assuming 25 nm for film thickness.

Original language	English
Pages (from-to)	2561-2563
Number of pages	3
Journal	Journal of the American Ceramic Society
Volume	73
Issue number	8
DOIs	https://doi.org/10.1111/j.1151-2916.1990.tb07637.x
Publication status	Published - 1990 Aug

All Science Journal Classification (ASJC) codes

Ceramics and Composites
Materials Chemistry

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10.1111/j.1151-2916.1990.tb07637.x

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title = "Preparation of Strontium Titanate Thin Film on Titanium Metal Substrate by Hydrothermal‐Electrochemical Method",

abstract = "Polycrystalline SrTiO3 thin films have been prepared on Timetal substrates by the hydrothermal‐electrochemical method. The films were prepared at temperatures ranging from 100° to 200°C and under saturated vapor pressures in electrolytic solutions of 1N to 5N Sr(OH)2. A galvanostat was used to apply a direct current of 5 to 25 mA/cm2. The films had smooth and homogeneous surfaces without any visible pores or defects. The dielectric constant of the films was approximately 129 assuming 25 nm for film thickness.",

author = "Yoo, {Seung Eul} and Motoo Hayashi and Nobuo Ishizawa and Masahiro Yoshimura",

year = "1990",

month = aug,

doi = "10.1111/j.1151-2916.1990.tb07637.x",

language = "English",

volume = "73",

pages = "2561--2563",

journal = "Journal of the American Ceramic Society",

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AU - Yoo, Seung Eul

AU - Hayashi, Motoo

AU - Ishizawa, Nobuo

AU - Yoshimura, Masahiro

PY - 1990/8

Y1 - 1990/8

N2 - Polycrystalline SrTiO3 thin films have been prepared on Timetal substrates by the hydrothermal‐electrochemical method. The films were prepared at temperatures ranging from 100° to 200°C and under saturated vapor pressures in electrolytic solutions of 1N to 5N Sr(OH)2. A galvanostat was used to apply a direct current of 5 to 25 mA/cm2. The films had smooth and homogeneous surfaces without any visible pores or defects. The dielectric constant of the films was approximately 129 assuming 25 nm for film thickness.

AB - Polycrystalline SrTiO3 thin films have been prepared on Timetal substrates by the hydrothermal‐electrochemical method. The films were prepared at temperatures ranging from 100° to 200°C and under saturated vapor pressures in electrolytic solutions of 1N to 5N Sr(OH)2. A galvanostat was used to apply a direct current of 5 to 25 mA/cm2. The films had smooth and homogeneous surfaces without any visible pores or defects. The dielectric constant of the films was approximately 129 assuming 25 nm for film thickness.

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Preparation of Strontium Titanate Thin Film on Titanium Metal Substrate by Hydrothermal‐Electrochemical Method

Abstract

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