Preparation of tungsten oxide nanowires from sputter-deposited WC x films using an annealing/oxidation process

Shui Jinn Wang, Chao Hsuing Chen, Rong Ming Ko, Yi Cheng Kuo, Chin Hong Wong, Chien Hung Wu, Kai Ming Uang, Tron Min Chen, Bor Wen Liou

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)

Abstract

The self-synthesis of tungsten oxide (W18 O49) nanowires on sputter-deposited W Cx films using a simple annealing/oxidization process was reported. It was found that thermal annealing of W Cx films at 680 °C for 30 min in nitrogen followed by oxidation at 450 °C for 30 min in pure oxygen would yield dense and well-crystallized monoclinic W18 O49 (010) nanowires with a typical length/diameter of about 0.15-0.2 μm10-20 nm. The formation of W18 O49 nanowires is attributed to the nuclei of immature W2 C nanowires experiencing a regrowth process, accompanied by carbon depletion and the oxidization of tungsten during the subsequent oxidization process.

Original languageEnglish
Article number263103
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number26
DOIs
Publication statusPublished - 2005 Jun 27

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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