Preparation of ZnO nanowires/p-GaN nanoheterojunction arrays and their optoelectric characteristics under UV and solar lights

Wei Chih Tsai; Shui Jinn Wang; Chih Ren Tseng; Wen I. Hsu; Jia Chuan Lin

doi:10.1109/DRC.2009.5354870

Preparation of ZnO nanowires/p-GaN nanoheterojunction arrays and their optoelectric characteristics under UV and solar lights

Wei Chih Tsai, Shui Jinn Wang, Chih Ren Tseng, Wen I. Hsu, Jia Chuan Lin

Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

One dimensional (ID) heterojunction arrays with high-density well-aligned ZnO nanowires (ZnO NWs) on p-type semiconductor has been demonstrated to be potential building blocks for photovoltaic (PV) and photodetecting devices applications due to its direct/wide band gap and the oriented geometry which provides a high carrier collection efficiency [1-6]. In this paper, we present the synthesis of vertically aligned ZnO NWs on a p-type gallium nitride (GaN) layer by using an easy hydrothermal method to form ZnO NW/p-GaN na no heterojunction (NHJ) arrays f or optoelectronic devices applications. The optoelectronic properties of the ZnO NWs/p-GaN N HJs with good UV sensitivities and superior PV performances under an UV (366 nm) light and asimulated AM1.5G solar illumination were reported. Effects of the length of ZnO NWs on the PV performance of the ZnO NWs/p-GaN NH Js were also investigated and discussed.

Original language	English
Title of host publication	67th Device Research Conference, DRC 2009
Pages	123-124
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2009.5354870
Publication status	Published - 2009 Dec 11
Event	67th Device Research Conference, DRC 2009 - University Park, PA, United States Duration: 2009 Jun 22 → 2009 Jun 24

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	67th Device Research Conference, DRC 2009
Country/Territory	United States
City	University Park, PA
Period	09-06-22 → 09-06-24

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/DRC.2009.5354870

Cite this

Tsai, W. C., Wang, S. J., Tseng, C. R., Hsu, W. I., & Lin, J. C. (2009). Preparation of ZnO nanowires/p-GaN nanoheterojunction arrays and their optoelectric characteristics under UV and solar lights. In 67th Device Research Conference, DRC 2009 (pp. 123-124). Article 5354870 (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2009.5354870

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title = "Preparation of ZnO nanowires/p-GaN nanoheterojunction arrays and their optoelectric characteristics under UV and solar lights",

abstract = "One dimensional (ID) heterojunction arrays with high-density well-aligned ZnO nanowires (ZnO NWs) on p-type semiconductor has been demonstrated to be potential building blocks for photovoltaic (PV) and photodetecting devices applications due to its direct/wide band gap and the oriented geometry which provides a high carrier collection efficiency [1-6]. In this paper, we present the synthesis of vertically aligned ZnO NWs on a p-type gallium nitride (GaN) layer by using an easy hydrothermal method to form ZnO NW/p-GaN na no heterojunction (NHJ) arrays f or optoelectronic devices applications. The optoelectronic properties of the ZnO NWs/p-GaN N HJs with good UV sensitivities and superior PV performances under an UV (366 nm) light and asimulated AM1.5G solar illumination were reported. Effects of the length of ZnO NWs on the PV performance of the ZnO NWs/p-GaN NH Js were also investigated and discussed.",

author = "Tsai, {Wei Chih} and Wang, {Shui Jinn} and Tseng, {Chih Ren} and Hsu, {Wen I.} and Lin, {Jia Chuan}",

year = "2009",

month = dec,

day = "11",

doi = "10.1109/DRC.2009.5354870",

language = "English",

isbn = "9781424435289",

series = "Device Research Conference - Conference Digest, DRC",

pages = "123--124",

booktitle = "67th Device Research Conference, DRC 2009",

note = "67th Device Research Conference, DRC 2009 ; Conference date: 22-06-2009 Through 24-06-2009",

}

Tsai, WC, Wang, SJ, Tseng, CR, Hsu, WI & Lin, JC 2009, Preparation of ZnO nanowires/p-GaN nanoheterojunction arrays and their optoelectric characteristics under UV and solar lights. in 67th Device Research Conference, DRC 2009., 5354870, Device Research Conference - Conference Digest, DRC, pp. 123-124, 67th Device Research Conference, DRC 2009, University Park, PA, United States, 09-06-22. https://doi.org/10.1109/DRC.2009.5354870

Preparation of ZnO nanowires/p-GaN nanoheterojunction arrays and their optoelectric characteristics under UV and solar lights. / Tsai, Wei Chih; Wang, Shui Jinn; Tseng, Chih Ren et al.
67th Device Research Conference, DRC 2009. 2009. p. 123-124 5354870 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Wang, Shui Jinn

AU - Tseng, Chih Ren

AU - Hsu, Wen I.

AU - Lin, Jia Chuan

PY - 2009/12/11

Y1 - 2009/12/11

N2 - One dimensional (ID) heterojunction arrays with high-density well-aligned ZnO nanowires (ZnO NWs) on p-type semiconductor has been demonstrated to be potential building blocks for photovoltaic (PV) and photodetecting devices applications due to its direct/wide band gap and the oriented geometry which provides a high carrier collection efficiency [1-6]. In this paper, we present the synthesis of vertically aligned ZnO NWs on a p-type gallium nitride (GaN) layer by using an easy hydrothermal method to form ZnO NW/p-GaN na no heterojunction (NHJ) arrays f or optoelectronic devices applications. The optoelectronic properties of the ZnO NWs/p-GaN N HJs with good UV sensitivities and superior PV performances under an UV (366 nm) light and asimulated AM1.5G solar illumination were reported. Effects of the length of ZnO NWs on the PV performance of the ZnO NWs/p-GaN NH Js were also investigated and discussed.

AB - One dimensional (ID) heterojunction arrays with high-density well-aligned ZnO nanowires (ZnO NWs) on p-type semiconductor has been demonstrated to be potential building blocks for photovoltaic (PV) and photodetecting devices applications due to its direct/wide band gap and the oriented geometry which provides a high carrier collection efficiency [1-6]. In this paper, we present the synthesis of vertically aligned ZnO NWs on a p-type gallium nitride (GaN) layer by using an easy hydrothermal method to form ZnO NW/p-GaN na no heterojunction (NHJ) arrays f or optoelectronic devices applications. The optoelectronic properties of the ZnO NWs/p-GaN N HJs with good UV sensitivities and superior PV performances under an UV (366 nm) light and asimulated AM1.5G solar illumination were reported. Effects of the length of ZnO NWs on the PV performance of the ZnO NWs/p-GaN NH Js were also investigated and discussed.

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BT - 67th Device Research Conference, DRC 2009

T2 - 67th Device Research Conference, DRC 2009

Y2 - 22 June 2009 through 24 June 2009

ER -

Preparation of ZnO nanowires/p-GaN nanoheterojunction arrays and their optoelectric characteristics under UV and solar lights

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