Preparation of ZnO nanowires/p-GaN nanoheterojunction arrays and their optoelectric characteristics under UV and solar lights

Wei Chih Tsai, Shui-Jinn Wang, Chih R. Tseng, Wen I. Hsu, Jia Chuan Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

One dimensional (ID) heterojunction arrays with high-density well-aligned ZnO nanowires (ZnO NWs) on p-type semiconductor has been demonstrated to be potential building blocks for photovoltaic (PV) and photodetecting devices applications due to its direct/wide band gap and the oriented geometry which provides a high carrier collection efficiency [1-6]. In this paper, we present the synthesis of vertically aligned ZnO NWs on a p-type gallium nitride (GaN) layer by using an easy hydrothermal method to form ZnO NW/p-GaN na no heterojunction (NHJ) arrays f or optoelectronic devices applications. The optoelectronic properties of the ZnO NWs/p-GaN N HJs with good UV sensitivities and superior PV performances under an UV (366 nm) light and asimulated AM1.5G solar illumination were reported. Effects of the length of ZnO NWs on the PV performance of the ZnO NWs/p-GaN NH Js were also investigated and discussed.

Original languageEnglish
Title of host publication67th Device Research Conference, DRC 2009
Pages123-124
Number of pages2
DOIs
Publication statusPublished - 2009 Dec 11
Event67th Device Research Conference, DRC 2009 - University Park, PA, United States
Duration: 2009 Jun 222009 Jun 24

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other67th Device Research Conference, DRC 2009
CountryUnited States
CityUniversity Park, PA
Period09-06-2209-06-24

Fingerprint

Gallium nitride
Nanowires
Optoelectronic devices
Heterojunctions
Energy gap
Lighting
Semiconductor materials
Geometry

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Tsai, W. C., Wang, S-J., Tseng, C. R., Hsu, W. I., & Lin, J. C. (2009). Preparation of ZnO nanowires/p-GaN nanoheterojunction arrays and their optoelectric characteristics under UV and solar lights. In 67th Device Research Conference, DRC 2009 (pp. 123-124). [5354870] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2009.5354870
Tsai, Wei Chih ; Wang, Shui-Jinn ; Tseng, Chih R. ; Hsu, Wen I. ; Lin, Jia Chuan. / Preparation of ZnO nanowires/p-GaN nanoheterojunction arrays and their optoelectric characteristics under UV and solar lights. 67th Device Research Conference, DRC 2009. 2009. pp. 123-124 (Device Research Conference - Conference Digest, DRC).
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Tsai, WC, Wang, S-J, Tseng, CR, Hsu, WI & Lin, JC 2009, Preparation of ZnO nanowires/p-GaN nanoheterojunction arrays and their optoelectric characteristics under UV and solar lights. in 67th Device Research Conference, DRC 2009., 5354870, Device Research Conference - Conference Digest, DRC, pp. 123-124, 67th Device Research Conference, DRC 2009, University Park, PA, United States, 09-06-22. https://doi.org/10.1109/DRC.2009.5354870

Preparation of ZnO nanowires/p-GaN nanoheterojunction arrays and their optoelectric characteristics under UV and solar lights. / Tsai, Wei Chih; Wang, Shui-Jinn; Tseng, Chih R.; Hsu, Wen I.; Lin, Jia Chuan.

67th Device Research Conference, DRC 2009. 2009. p. 123-124 5354870 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Tsai WC, Wang S-J, Tseng CR, Hsu WI, Lin JC. Preparation of ZnO nanowires/p-GaN nanoheterojunction arrays and their optoelectric characteristics under UV and solar lights. In 67th Device Research Conference, DRC 2009. 2009. p. 123-124. 5354870. (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2009.5354870