Pressure and UV light sensitive electron field emission properties of lateral ZnO nanowires with an emitter-to-emitter configuration

Wen I. Hsu; Shui-Jinn Wang; Wei Chih Tsai; Chih R. Tseng; Wen C. Hsu

doi:10.1109/DRC.2009.5354871

Pressure and UV light sensitive electron field emission properties of lateral ZnO nanowires with an emitter-to-emitter configuration

Wen I. Hsu, Shui-Jinn Wang, Wei Chih Tsai, Chih R. Tseng, Wen C. Hsu

Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, This study demonstrates the synthesis of lateral zinc oxide nanowires (ZnO NWs) with an emitter-to-emitter configuration on a simple Pt/AZO bi-layer structure by hydrothermal synthesis (HTS) method and presents their superior electron field emission (FE) characteristics and pressure/UV light (254, 366 nm) sensing properties. The highly sensitive response to both pressure and UV illumination is attributed to the use of an emitter-to-emitter configuration with short interelectrode spacing as well as the good crystal quality of the lateral ZnO NWs. Experimental results presented in this work indicate that the lateral ZnO NWs can be a potential candidate for devices applications of gas, pressure, and UV light sensors.

Original language	English
Title of host publication	67th Device Research Conference, DRC 2009
Pages	125-126
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2009.5354871
Publication status	Published - 2009 Dec 11
Event	67th Device Research Conference, DRC 2009 - University Park, PA, United States Duration: 2009 Jun 22 → 2009 Jun 24

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	67th Device Research Conference, DRC 2009
Country/Territory	United States
City	University Park, PA
Period	09-06-22 → 09-06-24

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/DRC.2009.5354871

Cite this

Hsu, W. I., Wang, S-J., Tsai, W. C., Tseng, C. R., & Hsu, W. C. (2009). Pressure and UV light sensitive electron field emission properties of lateral ZnO nanowires with an emitter-to-emitter configuration. In 67th Device Research Conference, DRC 2009 (pp. 125-126). [5354871] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2009.5354871

@inproceedings{992af59ae38c4cc4b66bc46b59d9a39a,

title = "Pressure and UV light sensitive electron field emission properties of lateral ZnO nanowires with an emitter-to-emitter configuration",

abstract = "Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, This study demonstrates the synthesis of lateral zinc oxide nanowires (ZnO NWs) with an emitter-to-emitter configuration on a simple Pt/AZO bi-layer structure by hydrothermal synthesis (HTS) method and presents their superior electron field emission (FE) characteristics and pressure/UV light (254, 366 nm) sensing properties. The highly sensitive response to both pressure and UV illumination is attributed to the use of an emitter-to-emitter configuration with short interelectrode spacing as well as the good crystal quality of the lateral ZnO NWs. Experimental results presented in this work indicate that the lateral ZnO NWs can be a potential candidate for devices applications of gas, pressure, and UV light sensors.",

author = "Hsu, {Wen I.} and Shui-Jinn Wang and Tsai, {Wei Chih} and Tseng, {Chih R.} and Hsu, {Wen C.}",

year = "2009",

month = dec,

day = "11",

doi = "10.1109/DRC.2009.5354871",

language = "English",

isbn = "9781424435289",

series = "Device Research Conference - Conference Digest, DRC",

pages = "125--126",

booktitle = "67th Device Research Conference, DRC 2009",

note = "67th Device Research Conference, DRC 2009 ; Conference date: 22-06-2009 Through 24-06-2009",

}

Hsu, WI, Wang, S-J, Tsai, WC, Tseng, CR & Hsu, WC 2009, Pressure and UV light sensitive electron field emission properties of lateral ZnO nanowires with an emitter-to-emitter configuration. in 67th Device Research Conference, DRC 2009., 5354871, Device Research Conference - Conference Digest, DRC, pp. 125-126, 67th Device Research Conference, DRC 2009, University Park, PA, United States, 09-06-22. https://doi.org/10.1109/DRC.2009.5354871

Pressure and UV light sensitive electron field emission properties of lateral ZnO nanowires with an emitter-to-emitter configuration. / Hsu, Wen I.; Wang, Shui-Jinn; Tsai, Wei Chih et al.
67th Device Research Conference, DRC 2009. 2009. p. 125-126 5354871 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Pressure and UV light sensitive electron field emission properties of lateral ZnO nanowires with an emitter-to-emitter configuration

AU - Hsu, Wen I.

AU - Wang, Shui-Jinn

AU - Tsai, Wei Chih

AU - Tseng, Chih R.

AU - Hsu, Wen C.

PY - 2009/12/11

Y1 - 2009/12/11

N2 - Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, This study demonstrates the synthesis of lateral zinc oxide nanowires (ZnO NWs) with an emitter-to-emitter configuration on a simple Pt/AZO bi-layer structure by hydrothermal synthesis (HTS) method and presents their superior electron field emission (FE) characteristics and pressure/UV light (254, 366 nm) sensing properties. The highly sensitive response to both pressure and UV illumination is attributed to the use of an emitter-to-emitter configuration with short interelectrode spacing as well as the good crystal quality of the lateral ZnO NWs. Experimental results presented in this work indicate that the lateral ZnO NWs can be a potential candidate for devices applications of gas, pressure, and UV light sensors.

AB - Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, This study demonstrates the synthesis of lateral zinc oxide nanowires (ZnO NWs) with an emitter-to-emitter configuration on a simple Pt/AZO bi-layer structure by hydrothermal synthesis (HTS) method and presents their superior electron field emission (FE) characteristics and pressure/UV light (254, 366 nm) sensing properties. The highly sensitive response to both pressure and UV illumination is attributed to the use of an emitter-to-emitter configuration with short interelectrode spacing as well as the good crystal quality of the lateral ZnO NWs. Experimental results presented in this work indicate that the lateral ZnO NWs can be a potential candidate for devices applications of gas, pressure, and UV light sensors.

UR - http://www.scopus.com/inward/record.url?scp=76549103098&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=76549103098&partnerID=8YFLogxK

U2 - 10.1109/DRC.2009.5354871

DO - 10.1109/DRC.2009.5354871

M3 - Conference contribution

AN - SCOPUS:76549103098

SN - 9781424435289

T3 - Device Research Conference - Conference Digest, DRC

SP - 125

EP - 126

BT - 67th Device Research Conference, DRC 2009

T2 - 67th Device Research Conference, DRC 2009

Y2 - 22 June 2009 through 24 June 2009

ER -

Pressure and UV light sensitive electron field emission properties of lateral ZnO nanowires with an emitter-to-emitter configuration

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