Pressure effect on the metal-semiconductor transition in 1-T TaS2

C. W. Chu, S. Huang, P. D. Hambourger, A. H. Thompson

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

It is found that the metal-semiconductor transition in the 1-T TaS2 is suppressed linearly by compression up to ∼ 15 kbar with dTo/dP = - (3.0±0.2) K/kbar. A two-band model with a small but temperature- and pressure-dependent overlap is proposed.

Original languageEnglish
Pages (from-to)93-94
Number of pages2
JournalPhysics Letters A
Volume36
Issue number2
DOIs
Publication statusPublished - 1971 Aug 16

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'Pressure effect on the metal-semiconductor transition in 1-T TaS2'. Together they form a unique fingerprint.

Cite this