Abstract
It is found that the metal-semiconductor transition in the 1-T TaS2 is suppressed linearly by compression up to ∼ 15 kbar with dTo/dP = - (3.0±0.2) K/kbar. A two-band model with a small but temperature- and pressure-dependent overlap is proposed.
Original language | English |
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Pages (from-to) | 93-94 |
Number of pages | 2 |
Journal | Physics Letters A |
Volume | 36 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1971 Aug 16 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)