Pressure effect on the metal-semiconductor transition in 1-T TaS2

C. W. Chu; S. Huang; P. D. Hambourger; A. H. Thompson

doi:10.1016/0375-9601(71)90761-4

Pressure effect on the metal-semiconductor transition in 1-T TaS₂

C. W. Chu
, S. Huang
, P. D. Hambourger
, A. H. Thompson

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Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

It is found that the metal-semiconductor transition in the 1-T TaS₂ is suppressed linearly by compression up to ∼ 15 kbar with dT_o/dP = - (3.0±0.2) K/kbar. A two-band model with a small but temperature- and pressure-dependent overlap is proposed.

Original language	English
Pages (from-to)	93-94
Number of pages	2
Journal	Physics Letters A
Volume	36
Issue number	2
DOIs	https://doi.org/10.1016/0375-9601(71)90761-4
Publication status	Published - 1971 Aug 16

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1016/0375-9601(71)90761-4

Cite this

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title = "Pressure effect on the metal-semiconductor transition in 1-T TaS2",

abstract = "It is found that the metal-semiconductor transition in the 1-T TaS2 is suppressed linearly by compression up to ∼ 15 kbar with dTo/dP = - (3.0±0.2) K/kbar. A two-band model with a small but temperature- and pressure-dependent overlap is proposed.",

author = "Chu, \{C. W.\} and S. Huang and Hambourger, \{P. D.\} and Thompson, \{A. H.\}",

year = "1971",

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doi = "10.1016/0375-9601(71)90761-4",

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T1 - Pressure effect on the metal-semiconductor transition in 1-T TaS2

AU - Chu, C. W.

AU - Huang, S.

AU - Hambourger, P. D.

AU - Thompson, A. H.

PY - 1971/8/16

Y1 - 1971/8/16

N2 - It is found that the metal-semiconductor transition in the 1-T TaS2 is suppressed linearly by compression up to ∼ 15 kbar with dTo/dP = - (3.0±0.2) K/kbar. A two-band model with a small but temperature- and pressure-dependent overlap is proposed.

AB - It is found that the metal-semiconductor transition in the 1-T TaS2 is suppressed linearly by compression up to ∼ 15 kbar with dTo/dP = - (3.0±0.2) K/kbar. A two-band model with a small but temperature- and pressure-dependent overlap is proposed.

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UR - https://www.scopus.com/pages/publications/26644464406#tab=citedBy

U2 - 10.1016/0375-9601(71)90761-4

DO - 10.1016/0375-9601(71)90761-4

M3 - Article

AN - SCOPUS:26644464406

SN - 0375-9601

VL - 36

SP - 93

EP - 94

JO - Physics Letters A

JF - Physics Letters A

IS - 2

ER -

Pressure effect on the metal-semiconductor transition in 1-T TaS₂

Abstract

All Science Journal Classification (ASJC) codes

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