Pressure effects on strained FeSe 0.5Te 0.5 thin films

M. Gooch; B. Lorenz; S. X. Huang; C. L. Chien; C. W. Chu

doi:10.1063/1.4726209

Pressure effects on strained FeSe _0.5Te _0.5 thin films

M. Gooch, B. Lorenz, S. X. Huang, C. L. Chien, C. W. Chu

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Abstract

The pressure effect on the resistivity and superconducting T _c of prestrained thin films of the iron chalcogenide superconductor FeSe _0.5Te _0.5 is studied. Films with different anion heights above the Fe layer showing different values of ambient pressure T _c's are compressed up to a pressure of 1.7 GPa. All films exhibit a significant increase of T _c with pressure. The results cannot solely be explained by a pressure-induced decrease of the anion height but other parameters have to be considered to explain the data for all films.

Original language	English
Article number	112610
Journal	Journal of Applied Physics
Volume	111
Issue number	11
DOIs	https://doi.org/10.1063/1.4726209
Publication status	Published - 2012 Jun 1

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.4726209

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title = "Pressure effects on strained FeSe 0.5Te 0.5 thin films",

abstract = "The pressure effect on the resistivity and superconducting T c of prestrained thin films of the iron chalcogenide superconductor FeSe 0.5Te 0.5 is studied. Films with different anion heights above the Fe layer showing different values of ambient pressure T c's are compressed up to a pressure of 1.7 GPa. All films exhibit a significant increase of T c with pressure. The results cannot solely be explained by a pressure-induced decrease of the anion height but other parameters have to be considered to explain the data for all films.",

author = "M. Gooch and B. Lorenz and Huang, {S. X.} and Chien, {C. L.} and Chu, {C. W.}",

note = "Funding Information: This work is supported in part by the T. L. L. Temple Foundation, the John J. and Rebecca Moores Endowment, the State of Texas through TCSUH, the U.S. Air Force Office of Scientific Research, and the U.S. Department of Energy. ",

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T1 - Pressure effects on strained FeSe 0.5Te 0.5 thin films

AU - Gooch, M.

AU - Lorenz, B.

AU - Huang, S. X.

AU - Chien, C. L.

AU - Chu, C. W.

N1 - Funding Information: This work is supported in part by the T. L. L. Temple Foundation, the John J. and Rebecca Moores Endowment, the State of Texas through TCSUH, the U.S. Air Force Office of Scientific Research, and the U.S. Department of Energy.

PY - 2012/6/1

Y1 - 2012/6/1

N2 - The pressure effect on the resistivity and superconducting T c of prestrained thin films of the iron chalcogenide superconductor FeSe 0.5Te 0.5 is studied. Films with different anion heights above the Fe layer showing different values of ambient pressure T c's are compressed up to a pressure of 1.7 GPa. All films exhibit a significant increase of T c with pressure. The results cannot solely be explained by a pressure-induced decrease of the anion height but other parameters have to be considered to explain the data for all films.

AB - The pressure effect on the resistivity and superconducting T c of prestrained thin films of the iron chalcogenide superconductor FeSe 0.5Te 0.5 is studied. Films with different anion heights above the Fe layer showing different values of ambient pressure T c's are compressed up to a pressure of 1.7 GPa. All films exhibit a significant increase of T c with pressure. The results cannot solely be explained by a pressure-induced decrease of the anion height but other parameters have to be considered to explain the data for all films.

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Pressure effects on strained FeSe _0.5Te _0.5 thin films

Abstract

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