Probing the low-temperature limit of the quantum anomalous Hall effect

Quantum anomalous Hall effect has been observed in magnetically doped topological insulators. However, full quantization, up until now, is limited within the sub-1 K temperature regime, although the material's magnetic ordering temperature can go beyond 100 K. Here, we study the temperature limiting factors of the effect in Cr-doped (BiSb)₂Te₃ systems using both transport and magneto-optical methods. By deliberate control of the thin-film thickness and doping profile, we revealed that the low occurring temperature of quantum anomalous Hall effect in current material system is a combined result of weak ferromagnetism and trivial band involvement. Our findings may provide important insights into the search for high-temperature quantum anomalous Hall insulator and other topologically related phenomena.