Probing the strength of light-matter interaction in semiconductor microcavities by using resonant-mode shifts in temperature-dependent photoluminescence spectra

Sheng Chan Wu; Chung Xian Yang; Jer Shing Huang; Yia Chung Chang; Ching Hang Chien; Hsu Cheng Hsu

doi:10.1063/5.0160026

Probing the strength of light-matter interaction in semiconductor microcavities by using resonant-mode shifts in temperature-dependent photoluminescence spectra

Sheng Chan Wu, Chung Xian Yang, Jer Shing Huang, Yia Chung Chang, Ching Hang Chien, Hsu Cheng Hsu

Department of Photonics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The Rabi-splitting energy represents the strength of light-matter interaction. This quantity is a good benchmark for evaluating the performance of light-modulation devices. Herein, we adopt ZnO microrods as microcavities for whispering gallery modes and propose a convenient method for estimating the light-matter coupling strength based on the shifts of resonant modes in temperature-dependent photoluminescence spectra from 295 to 77 K. Both temperature-dependent index dispersion and Rabi splitting can be extracted. Additionally, the Rabi-splitting energy of bulk ZnO at 0 K is estimated to be about 289 meV.

Original language	English
Article number	081102
Journal	APL Materials
Volume	11
Issue number	8
DOIs	https://doi.org/10.1063/5.0160026
Publication status	Published - 2023 Aug 1

All Science Journal Classification (ASJC) codes

General Materials Science
General Engineering

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10.1063/5.0160026

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title = "Probing the strength of light-matter interaction in semiconductor microcavities by using resonant-mode shifts in temperature-dependent photoluminescence spectra",

abstract = "The Rabi-splitting energy represents the strength of light-matter interaction. This quantity is a good benchmark for evaluating the performance of light-modulation devices. Herein, we adopt ZnO microrods as microcavities for whispering gallery modes and propose a convenient method for estimating the light-matter coupling strength based on the shifts of resonant modes in temperature-dependent photoluminescence spectra from 295 to 77 K. Both temperature-dependent index dispersion and Rabi splitting can be extracted. Additionally, the Rabi-splitting energy of bulk ZnO at 0 K is estimated to be about 289 meV.",

author = "Wu, {Sheng Chan} and Yang, {Chung Xian} and Huang, {Jer Shing} and Chang, {Yia Chung} and Chien, {Ching Hang} and Hsu, {Hsu Cheng}",

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AU - Wu, Sheng Chan

AU - Yang, Chung Xian

AU - Huang, Jer Shing

AU - Chang, Yia Chung

AU - Chien, Ching Hang

AU - Hsu, Hsu Cheng

PY - 2023/8/1

Y1 - 2023/8/1

N2 - The Rabi-splitting energy represents the strength of light-matter interaction. This quantity is a good benchmark for evaluating the performance of light-modulation devices. Herein, we adopt ZnO microrods as microcavities for whispering gallery modes and propose a convenient method for estimating the light-matter coupling strength based on the shifts of resonant modes in temperature-dependent photoluminescence spectra from 295 to 77 K. Both temperature-dependent index dispersion and Rabi splitting can be extracted. Additionally, the Rabi-splitting energy of bulk ZnO at 0 K is estimated to be about 289 meV.

AB - The Rabi-splitting energy represents the strength of light-matter interaction. This quantity is a good benchmark for evaluating the performance of light-modulation devices. Herein, we adopt ZnO microrods as microcavities for whispering gallery modes and propose a convenient method for estimating the light-matter coupling strength based on the shifts of resonant modes in temperature-dependent photoluminescence spectra from 295 to 77 K. Both temperature-dependent index dispersion and Rabi splitting can be extracted. Additionally, the Rabi-splitting energy of bulk ZnO at 0 K is estimated to be about 289 meV.

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Probing the strength of light-matter interaction in semiconductor microcavities by using resonant-mode shifts in temperature-dependent photoluminescence spectra

Abstract

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