This paper investigates methods of combining chemical vapor deposition diamond growth techniques with a physical vapor deposition technique and an ion-beam-enhanced deposition technique, respectively, to produce buried metallization of polycrystalline diamond films. The mechanical and electrical integrity of the insulating and conducting elements following metallization and diamond overgrowth is shown. Both methods are shown to have bonding strength sufficient to withstand tape lift-off. Diamond overgrowth is also shown, thus enabling buried metallized layers to be created. Electrical resistivity measurements on metallized layers and between metallization separated by diamond films are shown to be sufficient to allow the use of diamond as an insulating interlayer material for multilayer circuit boards.
|Number of pages||4|
|Journal||Journal of the American Ceramic Society|
|Publication status||Published - 1999 Dec 1|
All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Geochemistry and Petrology
- Materials Chemistry